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Method For Manufacturing A Solar Cell With A Surface-Passivating Dielectric Double Layer, And Corresponding Solar Cell - EP2220689

The patent EP2220689 was granted to Hanwha Q Cells on Aug 27, 2014. The application was originally filed on Nov 6, 2008 under application number EP08850615A. The patent is currently recorded with a legal status of "Granted And Under Opposition".

EP2220689

HANWHA Q CELLS
Application Number
EP08850615A
Filing Date
Nov 6, 2008
Status
Granted And Under Opposition
Grant Date
Aug 27, 2014
External Links
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Patent Summary

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Patent Family

Patent Oppositions (10)

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RISEN ENERGYJun 18, 2024EUROPE PATENTANWALTSKANZLEIINTERVENTION
LONGI NETHERLANDS TRADINGJun 17, 2021GRUNECKER PATENTINTERVENTION WITHDRAWN
LONGI SOLAR TECHNOLOGIEJul 2, 2019GRUNECKER PATENTINTERVENTION WITHDRAWN
JINKOSOLARJun 24, 2019EUROPE PATENTANWALTSKANZLEIINTERVENTION WITHDRAWN
REC SOLAR EMEAJun 14, 2019BETTEN & RESCHINTERVENTION ADMISSIBLE
SINGULUSMay 27, 2015VOSSIUS & PARTNER PATENTANWALTE RECHTSANWALTE MBBADMISSIBLE
SOLAYTECMay 27, 2015VOADMISSIBLE
BITTNERMay 27, 2015KAILUWEIT & UHLEMANN PATENTANWALTE PARTNERSCHAFT MBBWITHDRAWN
HEPP WENGER RYFFELMay 27, 2015-WITHDRAWN
IMEC VZWMay 26, 2015PATENT DEPARTMENT IMECWITHDRAWN

Patent Citations (16) New

Patent citations refer to prior patents cited during different phases such as opposition or international search.

Citation PhasePublication NumberPublication Link
INTERNATIONAL-SEARCH-REPORTEP1489667
INTERNATIONAL-SEARCH-REPORTUS2006157733
OPPOSITIONEP1763086
OPPOSITIONJP2007134424
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OPPOSITIONUS4463216
OPPOSITIONUS4649088
OPPOSITIONUS5057163
OPPOSITIONUS6930052
OPPOSITIONWO2006096247
OPPOSITIONWO2006097303
OPPOSITIONWO2008065918

Non-Patent Literature (NPL) Citations (44) New

NPL citations refer to non-patent references such as research papers, articles, or other publications cited during examination or opposition phases.

Citation PhaseReference TextLink
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EXAMINATION- LEE ET AL, "Investigation of various surface passivation schemes for silicon solar cells", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, (20060106), vol. 90, no. 1, doi:DOI:10.1016/J.SOLMAT.2005.02.007, ISSN 0927-0248, pages 82 - 92, XP005149780
OPPOSITION- "Appendix A", ROLF BRENDEL, Thin-Film Crystalline Silicon Solar Cells: Physics and Technology, Weinheim, (20030000), pages 181 - 208, XP055820080-
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OPPOSITION- LEE et al., "Investigation of various surface passivation layers using oxide/nitride stacks of silicon solar cells", Proceedings of third world conference on photovoltaic energy conversion, Osaka, (20030500), XP055820069-
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OPPOSITION- P.R. CAMPBELL, "Light trapping and reflection control in a crystalline silicon solar cell", Dissertation University of New South Wales, (19890600), XP055820102-
OPPOSITION- R. HEZEL et al., "Low-Temperature Surface Passivation of Silicon for Solar Cells", J. Electrochem. Soc., (19890200), vol. 136, no. 2, pages 518 - 523, XP000098588-
OPPOSITION- THANH et al., "Elimination and generation of Si-SiO2 interface traps by low temperature hydrogen annealing", Journal of The Electrochemical Society, (19880700), vol. 135, no. 7, pages 1797 - 1801, XP055820074-
OPPOSITION- ZHAO et al., "24% efficient silicon solar cells", WCPEC, Hawaii, (19941205), pages 1477 - 1480, XP000680105-
OPPOSITION- B. HOEX et al., "Industrial high-rate (-5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions", Progress in photovoltaics: research and applications, (20050616), pages 705 - 712, XP055619968
OPPOSITION- KRAY et al., "Theory and experiments on the black side reflectance of silicon wafer solar cells", Progress in Photovoltaics: Research and Applications, (20070508), vol. 16, pages 1 - 15, XP055026968
OPPOSITION- R. HEZEL, "Silicon nitride for the improvement of silicon inversion layer solar cells", Solid-State Electronics, (19810000), vol. 24, no. 9, doi:10.1016/0038-1101(81)90103-9, pages 863 - 868, XP025753175
OPPOSITION- C. LEGUIJT et al., "Low temperature surface passivation for silicon solar cells", Solar Energy Materials& Solar Cells, (19960000), vol. 40, doi:10.1016/0927-0248(95)00155-7, XP000630901
OPPOSITION- MIKKO RITALA, "Atomic layer deposition", Handbook of Thin Film Materials, (20020000), pages 103 - 159, XP055619935
OPPOSITION- J I YOUN LEE, "Investigation of various surface passivation schemes for silicon solar cells", Solar Energy Materials& Solar Cells, (20040000), vol. 90, no. 1, pages 82 - 92, XP005149780
OPPOSITION- LEE et al., "Investigation of various surface passivation schemes for silicon solar cells", Solar Energy Materials & Solar Cells, (20050604), vol. 90, doi:10.1016/j.solmat.2005.02.007, pages 82 - 92, XP028002052
OPPOSITION- MARKKU LESKELA et al., "Atomic layer deposition (ALD): from precursors to thin film structures", Thin Solid Films, (20020000), vol. 409, doi:10.1016/S0040-6090(02)00117-7, XP055601337
OPPOSITION- F. DUERINCKX et al., "Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride", Solar Energy Materials & Solar Cells, (20020000), vol. 72, doi:10.1016/S0927-0248(01)00170-2, pages 231 - 246, XP004339770
OPPOSITION- F. DUERINCKX et al., "Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride", Solar Energy Materials& Solar Cells, (20020000), vol. 72, doi:10.1016/S0927-0248(01)00170-2, XP004339770
OPPOSITION- W. BLAKERS et al., "22.8% efficient silicon solar cell", Appl. Phys. Lett., (19890000), vol. 55, doi:10.1063/1.101596, pages 1363 - 1365, XP000081976
OPPOSITION- G. S. HIGASHI et al., "Sequential surface chemical reaction limited growth of high quality AI203 dialectrics", Applied Physics Letters, (19890000), vol. 55, no. 19, pages 1963 - 1965, XP000099988
OPPOSITION- S. NARASIMHA et al., "Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/plasma silicon nitride stack", Applied Physics Letters, (19980000), vol. 72, doi:10.1063/1.121211, XP012019991
OPPOSITION- E. P. GUSEV et al., "High-resolution depth profiling in ultrathin AI2O3 films on Si", Applied Physics Letters, (20000110), vol. 76, no. 2, doi:10.1063/1.125694, XP012025271
OPPOSITION- B. HOEX, "Ultralow surface recombination of c-Si substrates passivated by plasma- assisted atomic layer deposited AI203", Applied Physics Letters, (20060000), vol. 89, doi:10.1063/1.2240736, XP012088131
OPPOSITION- HOEX, B et al., "Ultralow surface recombination of c- SI substrates passivated by plasma-assisted atomic layer deposited Al2O3", Applied Physics Letters, (20060727), vol. 89, no. 4, page 042112, XP012088131
OPPOSITION- B. HOEX et al., "Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al 2 O 3", Applied Physics Letters, (20070000), vol. 91, doi:10.1063/1.2784168, XP012099144
OPPOSITION- HOEX, B. et al., "Excellent passivation ofhighlydoped p-type Si surfaces by the negative-charge-dielectric Al2O3", Applied Physics Letters, (20070000), vol. 91, doi:10.1063/1.2784168, page 112107, XP012099144
OPPOSITION- HOEX B et al., "Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3", APPLIED PHYSICS LETTERS, MELVILLE, NY, US, (20070911), pages 112107 - 1 - 112107-3, XP012099144
OPPOSITION- S. W. HSIEH et al., "Properties of plasma-enhanced chemical-vapor-deposited a-SiNx:H by various diluted gases", Journal of Applied Physics, (19940000), vol. 76, pages 3645 - 3655, XP000470076
OPPOSITION- JAN SCHMIDT et al., "Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks", Semiconductor Science and Technology, (20010000), vol. 16, doi:10.1088/0268-1242/16/3/308, pages 164 - 170, XP001030218
OPPOSITION- SCHMIDT, JAN et al., "Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks", Semiconductor Science and Technology, (20010000), vol. 16, doi:10.1088/0268-1242/16/3/308, pages 164 - 170, XP001030218
OPPOSITION- LI CAI et al., "Effect of Post-PECVD Photo-Assisted Anneal on Multicrystalline Silicon Solar Cells", IEEE Transactions on Electron Devices, (19970100), vol. 44, no. 1, doi:10.1109/16.554799, XP000689003
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OPPOSITION- ROHATGI et al., "Comprehensive Study of Rapid, Low-Cost Silicon Surface Passivation Technologie s", IEEE TRANSACTIONS ON ELECTRON DEVICES, (20000500), vol. 47, no. 5, doi:10.1109/16.841230, XP000928620
OPPOSITION- Z. CHEN et al., "Silicon surface and bulk defect pas- sivation by low temperature PECVD oxides and nitrides", Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC, (19940000), vol. 2, pages 1331 - 1334, XP000680085
OPPOSITION- EBONG et al., "The effect of low and high temperature anneals on the hydrogen content and passivation of Si surface coated with SiO2 and SiN films", Journal of the electrochemical society, (19990000), vol. 146, no. 5, doi:10.1149/1.1391866, pages 1921 - 1924, XP008062178
OPPOSITION- VAN HEMMEN et al., "Plasma and Thermal ALD of AI203 in a Commercial 200 mm ALD Reactor", J. Electrochem. Soc., (20070521), vol. 154, no. 7, doi:10.1149/1.2737629, pages G165 - G169, XP002616873
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