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Method And Device For Detecting Cracks In Semiconductor Substrates - EP2494339

The patent EP2494339 was granted to Schott on Mar 24, 2021. The application was originally filed on Aug 13, 2010 under application number EP10751799A. The patent is currently recorded with a legal status of "Patent Maintained As Amended".

EP2494339

SCHOTT
Application Number
EP10751799A
Filing Date
Aug 13, 2010
Status
Patent Maintained As Amended
Feb 19, 2021
Grant Date
Mar 24, 2021
External Links
Slate, Register, Google Patents

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INTEGOApr 19, 2018FDST PATENTANWALTEADMISSIBLE

Patent Citations (19) New

Patent citations refer to prior patents cited during different phases such as opposition or international search.

Citation PhasePublication NumberPublication Link
DESCRIPTIONDE10146879
DESCRIPTIONJPH08220008
DESCRIPTIONWO2008112597
EXAMINATIONJP2001305072
INTERNATIONAL-SEARCH-REPORTCN1908638
INTERNATIONAL-SEARCH-REPORTJPH08220008
INTERNATIONAL-SEARCH-REPORTUS2005231713
INTERNATIONAL-SEARCH-REPORTWO2009125896
OPPOSITIONCN1908638
OPPOSITIONDE102009017786
OPPOSITIONDE10316707
OPPOSITIONDE112006000392T
OPPOSITIONJP2001305072
OPPOSITIONUS2005231713
OPPOSITIONUS5355213
OPPOSITIONUS8055058
OPPOSITIONWO2009125896
OTHERDE10316707
OTHERJP2001305072

Non-Patent Literature (NPL) Citations (17) New

NPL citations refer to non-patent references such as research papers, articles, or other publications cited during examination or opposition phases.

Citation PhaseReference TextLink
EXAMINATION- Lau W S, Infrared Characterization for Microelectronics, Singapore, World Scientific Publishing Co., (1999), page 145, ISBN 981-02-2352-8-
EXAMINATION- RAKOTONIAINA J P ET AL., "Distribution and formation of silicon carbide and silicon nitride precipitates in block-cast multicrystalline silicon", 20TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, Barcelona, Spain, (20050606), pages 773 - 776-
OPPOSITION- E. RUELAND et al., "Optical µ-crack detection in combination with stability testing for in-line- inspection of wafers and cells", 20th European Solar Energy Conference and Exhibition, Barcelona, Spain, (20050606), pages 1 - 4, XP002561474-
OPPOSITION- Gräff O.; Ortner A.: "Neues Infrarot-Prüfverfahren zur Detektion von Mikrorissen in Silizium-Wafer". (DGaO-Proceedings 2010)-
OPPOSITION- NANGO et al., "Detection of very small defects and tiny inclusions just under mirror polished surfaces of silicon wafers by inside total reflection", J. Appl. Phys., (19950815), vol. 78, no. 4, pages 2892 - 2893-
OPPOSITION- OGAWA et al., "Infrared light scattering tomography with an electrical streak camera for characterization of semiconductor crystals", Rev. Sci. Instrum., (19860600), vol. 57, no. 6, pages 1135 - 1139-
OPPOSITION- OGAWA et al., "Infrared light scattering tomography with an electrical streak camera for characterization of semiconductor crystals", Rev. Sci. Instrum., (19860600), vol. 57, no. 6, pages 1135 - 1139, XP001321609-
OPPOSITION- TAIJING et al., "Oberservation of microdefects and microprecipitates in Si crystals by IR scat- tering tomography", Journal of Crystal Growth, (19910000), vol. 108, no. 3-4, pages 482 - 490-
OPPOSITION- TAIJING et al., "Oberservation of microdefects and microprecipitates in Si crystals by IR scat- tering tomography", Journal of Crystal Growth, (19910000), vol. 108, no. 3-4, pages 482 - 490, XP024430301
OPPOSITION- NANGO et al., "Detection of very small defects and tiny inclusions just under mirror polished surfaces of silicon wafers by inside total reflection", J. Appl. Phys., (19950815), vol. 78, no. 4, pages 2892 - 2893, XP003028353
OTHER- FILLARD J.P., "Laser Scanning Tomography: A Non Destructive Qualification Test for Semiconductors", SOLID STATE DEVICE RESEARCH CONFERENCE, (19880913), pages C4-463 - C4-470, XP031652325-
OTHER- INFRARED CHARACTERIZATION FOR MICROELECTRONICS, SINGAPORE, WORLD SCIENTIFIC PUBLISHING CO. PTE LTD., (1999), page 145, ISBN 981-02-2352-8, XP003035290-
OTHER- OGAWA T. AND N. NANGO, "Infrared light scattering tomography with an electrical streak camera for characterization of semiconductor crystals", REVIEW OF SCIENTIFIC INSTRUMENTS, (19860601), vol. 57, no. 6, pages 1135 - 1139, XP001321609-
OTHER- RAKOTONIAINA J.P. ET AL., "DISTRIBUTION AND FORMATION OF SILICON CARBIDE AND SILICON NITRIDE PRECIPITATES IN BLOCK-CAST MULTICRYSTALLINE SILICON", 20TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, (20050606), pages 773 - 776, XP055207291-
OTHER- RUELAND E. ET AL., "OPTICAL [MU]-CRACK DETECTION IN COMBINATION WITH STABILITY TESTING FOR IN-LINE-INSPECTION OF WAFERS AND CELLS", 20TH EUROPEAN SOLAR ENERGY CONFERENCE AND EXHIBITION, (20050606), XP002561474-
OTHER- TAIJING L; TOYODA K; NANGO N; OGAWA T, "Observation of microdefects and microprecipitates in Si crystals by IR scattering tomography", JOURNAL OF CRYSTAL GROWTH, (19910201), vol. 108, no. 3-4, pages 482 - 490, XP024430301
OTHER- NANGO N. ET AL, "Detection of very small defects and tiny inclusions just under mirror polished surfaces of silicon wafers by inside total reflection", J. APPL. PHYSICS, (1995), vol. 78, no. 4, pages 2892 - 2893, XP003028353

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