Focused Ion Beam Low Kv Enhancement - EP2772930

The patent EP2772930 was granted to FEI on Jul 4, 2018. The application was originally filed on Feb 25, 2014 under application number EP14156445A. The patent is currently recorded with a legal status of "Revoked".

EP2772930

FEI
Application Number
EP14156445A
Filing Date
Feb 25, 2014
Status
Revoked
Feb 28, 2025
Grant Date
Jul 4, 2018
External Links
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Patent Summary

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CARL ZEISSApr 3, 2019GLAWEADMISSIBLE

Patent Citations (6) New

Patent citations refer to prior patents cited during different phases such as opposition or international search.

Citation PhasePublication NumberPublication Link
OPPOSITIONUS5393985
OPPOSITIONUS5748360
OPPOSITIONUS7601953
SEARCHUS2007215802
SEARCHUS5393985
SEARCHUS5748360

Non-Patent Literature (NPL) Citations (3) New

NPL citations refer to non-patent references such as research papers, articles, or other publications cited during examination or opposition phases.

Citation PhaseReference TextLink
OPPOSITION- Kangsa Pak, Et Al., "Fabrication of a newly developed low-energy focused ion beam system and its application to the maskless selective deposition on microarea", Department of electrical and electronic engineering, (19920910), pages 899 - 904, XP055582233-
OPPOSITION- KANGSA PAK; ET AL, "IN-SITU MASKLESS SELECTIVE AREA EPITAXY OF GAAS USING A LOW-ENERGY GA FOCUSED ION BEAM", Journal of Crystal Growth, vol. 140, no. 1/02, ( ), pages 244 - 247, XP000469700
OPPOSITION- Rauscher Micheal, Et Al., "Optimum mode of operation for low energy focused ion beam system", J. Vac. Sci. Technol. B., vol. 22, no. 6, (20041210), pages 3004 - 3007, XP055582236

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Dossier Documents

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