IP Verse

High-Frequency Amplifier Arrangement - EP3317964

The patent EP3317964 was granted to Trumpf Httinger on Apr 8, 2020. The application was originally filed on Jun 30, 2016 under application number EP16739430A. The patent is currently recorded with a legal status of "Opposition Rejected".

EP3317964

TRUMPF HTTINGER
Application Number
EP16739430A
Filing Date
Jun 30, 2016
Status
Opposition Rejected
Feb 22, 2025
Grant Date
Apr 8, 2020
External Links
Slate, Register, Google Patents

Patent Summary

Patent Family

Patent Family

Patent Oppositions (2)

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COMETJan 5, 2021DOMPATENT VON KREISLER SELTING WERNERADMISSIBLE
COMETJan 5, 2021DOMPATENT VON PATENT UND RECHTSANWALTENADMISSIBLE

Patent Citations (20) New

Patent citations refer to prior patents cited during different phases such as opposition or international search.

Citation PhasePublication NumberPublication Link
DESCRIPTIONUS2009027936
DESCRIPTIONUS2014167858
DESCRIPTIONUS6064249
DESCRIPTIONUS6172383
INTERNATIONAL-SEARCH-REPORTDE3240726
INTERNATIONAL-SEARCH-REPORTJP2013135159
INTERNATIONAL-SEARCH-REPORTJP4271457B
INTERNATIONAL-SEARCH-REPORTUS2011241781
INTERNATIONAL-SEARCH-REPORTUS5691557
INTERNATIONAL-SEARCH-REPORTUS6172383
INTERNATIONAL-SEARCH-REPORTUS9355822
OPPOSITIONJP4271457B
OPPOSITIONUS2009027936
OPPOSITIONUS2014167858
OPPOSITIONUS2014361690
OPPOSITIONUS5691557
OPPOSITIONUS6064249
OPPOSITIONUS6172383
OPPOSITIONUS6819180
OPPOSITIONUS7368995

Non-Patent Literature (NPL) Citations (10) New

NPL citations refer to non-patent references such as research papers, articles, or other publications cited during examination or opposition phases.

Citation PhaseReference TextLink
INTERNATIONAL-SEARCH-REPORT- FREDERICK H RAAB ED - ANONYMOUS, "Broadband Class-E Power Amplifier for HF and VHF", MICROWAVE SYMPOSIUM DIGEST, 2006. IEEE MTT-S INTERNATIONAL, IEEE, PI, (20060601), ISBN 978-0-7803-9541-1, pages 902 - 905, XP031018618 [A] 1-24 * the whole document *-
OPPOSITION- Anonymous, "AR 142042 BLF188XR 27MHz Board 2623", Application Measurement Report, (20130625), pages 1 - 13, XP055774447-
OPPOSITION- Anonymous, "MRFE6VP61K25H: RF Power LDMOS Transistors", Freescale Semiconductor-Technical Data, (20140300), no. MRFE6VP61K25H, pages 1 - 23, XP055774343-
OPPOSITION- Anonymous, "Schottky diode", Wikipedia, (20200330), pages 1 - 106, XP055774385-
OPPOSITION- Anton Funkperlen, "Eine Low Cost PA für 80 und 160m", Weblog Anton 's Funkperlen, (20150201), pages 1 - 5, XP055774461-
OPPOSITION- BLOEM, V. , J. de BOET, H. Van ROSSUM, K. VENNEMA, "Extremely rugged 50 V LDMOS devices capture ISM and Broadcast markets", White Paper. NXP Semiconductors, (20131100), pages 1 - 24, XP055774374-
OPPOSITION- Gautham Venkat Arumilli, "RF Breakdown Effects in Microwave Power Amplifiers", Dissertation, (20070600), pages 1 - 98, XP055774380-
OPPOSITION- GAYATRI ASHOK et al., "Design and development of 1 KW solid state RF Amplifier", J. Phys.: Conf. Ser, vol. 208, (20100000), URL: https://i- opscience.iop.orq/article/10.1088/1742-6596/208/1/012013/pdf, XP020177676-
OPPOSITION- LLOYD BUTLER, "AN RF POWER LINEAR USING IRF MOSFETS", Mofset Linear Amplifier, (19891100), XP055774457-
OPPOSITION- Theeuwen C. H., J.A.M. De Boet, V.J. Bloem, W.J.A.M, "LDMOS ruggedness reliability", Microwave Journal, (20090400), pages 1 - 5, XP055774323-

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Dossier Documents

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