IP Verse

Method Of Manufacturing Solar Cell - EP3349257

The patent EP3349257 was granted to LG Electronics on Oct 7, 2020. The application was originally filed on Jan 10, 2018 under application number EP18150978A. The patent is currently recorded with a legal status of "Granted And Under Opposition".

EP3349257

LG ELECTRONICS
Application Number
EP18150978A
Filing Date
Jan 10, 2018
Status
Granted And Under Opposition
Sep 4, 2020
Grant Date
Oct 7, 2020
External Links
Slate, Register, Google Patents

Patent Summary

Patent Family

Patent Family

Patent Oppositions

Patent oppositions filed by competitors challenge the validity of a granted patent. These oppositions are typically based on claims of prior art, lack of novelty, or non-obviousness. They are a key part of the process for determining a patent's strength and enforceability.

CompanyOpposition DateRepresentativeOpposition Status

Get instant alerts for new oppositions and patent status changes

WILSON GUNN MANCHESTERJul 6, 2021-ADMISSIBLE

Patent Citations (5) New

Patent citations refer to prior patents cited during different phases such as opposition or international search.

Citation PhasePublication NumberPublication Link
OPPOSITIONEP1460693
OPPOSITIONWO2013021298
SEARCHUS2009020154
SEARCHUS2018006165
SEARCHWO2016111339

Non-Patent Literature (NPL) Citations (8) New

NPL citations refer to non-patent references such as research papers, articles, or other publications cited during examination or opposition phases.

Citation PhaseReference TextLink
OPPOSITION- DAMON-LACOSTE et al., "Ultra-high quality surface passivation of crystalline silicon wafers in large area parallel plate reactor at 40 MHz", Thin Solid Films, (20090000), XP026459617-
OPPOSITION- Das U K, Burrows, Bowden, Birkmire, "SURFACE PASSIVATION QUALITY AND STRUCTURE OF THIN Si:H LAYERS ON N-TYPE CRYSTALLINE Si (100) AND (111) WAFERS", 22nd European Photovoltaic Solar Energy Conference, 3-7 September 2007, Milan, Italy, (20070901), pages 1290 - 1293, XP055825446-
OPPOSITION- Labrune Martin, "Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells", Doctoral thesis in Materials Science at Ecole Polytechnique, (20110520), pages 1 - 228, XP055825449-
OPPOSITION- GE et al., "Optimisation of Intrinsic a-Si:H Passivation Layers in Crystalline- amorphous Silicon Heterojunction Solar Cells", International Conference on Materials for Advanced Technologies 2011 Symposium O, XP055432056
OPPOSITION- HUANG et al., The effect of H 2 treatment on heterojunction with intrinsic thin layer (HIT) solar cell perfromance using 40.68MHz VHF-PECVD system, XP032168318
OPPOSITION- "PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC", 37 TH IEEE, (20110619), pages 3001 - 3004, XP032168318
SEARCH- KAKIUCHI H ET AL, "Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition", JOURNAL OF NON-CRYSTALLINE SOLIDS, NORTH-HOLLAND PHYSICS PUBLISHING. AMSTERDAM, NL, vol. 351, no. 8-9, ISSN 0022-3093, (20050401), pages 741 - 747, (20050401), XP027660725 [Y] 3 * abstract * * page 741, column left, paragraph 1 - page 744, column right, paragraph 3; figures 1,3,4 * * figure 7 *-
SEARCH- MAN-CHI HUANG ET AL, "The effect of H 2 treatment on heterojunction with intrinsic thin layer (HIT) solar cell perfromance using 40.68MHz VHF-PECVD system", PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2011 37TH IEEE, IEEE, (20110619), doi:10.1109/PVSC.2011.6186575, ISBN 978-1-4244-9966-3, pages 3001 - 3004, XP032168318 [X] 1,4 * page 3001, column left, paragraph 1 - page 3002, column right, paragraph 1; figure 1 * * page 3004, column left, paragraph 1 * [A] 8,9 [Y] 2,3,5-7

Download Citation Report

Get a free citation report including examiner, opposition, and international search citations.

Get Citation Report

Dossier Documents

The dossier documents provide a comprehensive record of the patent’s prosecution history - including filings, correspondence, and decisions made by patent offices - and are crucial for understanding the patent’s legal journey and any challenges it may have faced during examination.

  • Date

    Description

  • Get instant alerts for new documents