Method For Manufacturing A Solar Cell With A Surface-Passivating Dielectric Double Layer, And Corresponding Solar Cell

Patent No. EP2220689 (titled "Method For Manufacturing A Solar Cell With A Surface-Passivating Dielectric Double Layer, And Corresponding Solar Cell") was filed by Hanwha Q Cells on Nov 6, 2008. The application was issued on Aug 27, 2014.

Patent Summary

Method for producing high-efficiency solar cells with enhanced surface passivation through a novel dielectric layer architecture. The method employs a sequential gas phase deposition process to create a thin alumina layer on the silicon substrate, followed by a thicker silicon oxide layer. The alumina layer is then modified with hydrogen through a plasma-enhanced chemical vapor deposition process, resulting in a dielectric layer with superior surface passivation properties compared to conventional aluminum oxide layers. The hydrogen content in the modified dielectric layer is optimized to achieve optimal saturation of dangling bonds, further enhancing the passivation effect.

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EP2220689

HANWHA Q CELLS
Application Number
EP08850615A
Filing Date
Nov 6, 2008
Status
Granted And Under Opposition
Publication Date
Aug 27, 2014