Patent No. EP4236650 (titled "Method For Reading Three-Dimensional Flash Memory") was filed by Yangtze Memory on Oct 23, 2019. The application was issued on May 14, 2025.
A method for reading a three-dimensional (3D) memory cell that accelerates fast charge loss to improve read accuracy and efficiency. The method includes a read-prepare step that removes fast charges from the target memory cell by applying specific voltages to unselected word lines and select gates, followed by a sensing step that measures the threshold voltage of the target memory cell.

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