Memory module with data buffering

Patent No. US10489314 (titled "Memory module with data buffering") on Dec 28, 2017. The application was issued on Nov 26, 2019.

What is this patent about?

’314 is related to the field of high-density memory modules, such as DIMMs, used in computer systems. It specifically addresses the technical challenges of increasing memory capacity and signal integrity by managing the electrical interface between a memory controller and multiple ranks of memory integrated circuits. The background context involves the physical and electrical limitations—such as capacitive loading, signal interference, and chip-select constraints—that typically arise when trying to expand memory beyond standard configurations.

The underlying idea behind ’314 is the use of an active buffering and logic layer resident on the memory module to decouple the physical memory devices from the system data bus. By implementing load isolation, the invention allows a memory module to populate more ranks or higher-density configurations than the memory controller might natively support or electrically handle. A key engineering insight is the intentional introduction of a registered data transfer delay, which provides the necessary timing budget for the logic to manage complex data path switching and address translation without compromising signal integrity at high frequencies.

The claims of ’314 focus on a memory module architecture that utilizes circuitry and logic to manage data transfers between a plurality of N-bit wide ranks and an N-bit wide data bus. The independent claims specifically cover the use of logic pipelines and control signals to enable registered data transfers through the module’s internal circuitry. A critical limitation in these claims is that the circuitry adds a predetermined time delay to these transfers, resulting in an overall CAS latency for the module that is higher than the actual operational CAS latency of the individual memory chips mounted on it.

In practice, the invention works by intercepting input address and control signals, including chip selects, and generating registered versions to activate specific memory ranks. When a read or write command is issued, the module's logic provides control signals to a buffer that selectively couples the target rank to the data bus while isolating others. This mechanism effectively masks the electrical load of the inactive ranks from the memory controller. By reporting a higher CAS latency to the system via the Serial-Presence-Detect (SPD) device, the module gains the extra clock cycles needed to perform this internal routing and signal conditioning.

This approach differs from prior solutions by moving beyond simple passive wiring or basic registering of command lines. Unlike standard registered DIMMs that only buffer control signals, this invention implements a data path rank buffer that actively manages the DQ and DQS (data strobe) lines. This prevents signal collisions during back-to-back reads from different ranks and reduces the total capacitive load seen by the memory controller to that of the buffer itself, rather than the sum of all memory chips. This allows for the transparent use of lower-density, lower-cost components to simulate high-capacity, high-performance virtual memory devices.

How does this patent fit in bigger picture?

Technical Landscape

In the mid-2000s when ’314 was filed, memory subsystem architectures were typically implemented using a direct electrical connection between the memory controller and the individual memory devices mounted on a module. At a time when system motherboards commonly relied on a limited number of physical chip-select signals to manage memory ranks, increasing the total memory capacity per slot was often restricted by the controller's ability to address only one or two ranks. Furthermore, when hardware constraints made signal integrity and load fan-out non-trivial at higher operating frequencies, the cumulative electrical loading of multiple memory devices on the data bus created significant timing and power dissipation challenges for high-density configurations.

Prosecution Position

The disclosed invention represents a meaningful technical advancement through an architectural shift that utilizes a buffer to provide dynamic load isolation between memory integrated circuits and the system data bus. By implementing logic that selectively couples a target memory circuit to the data bus while simultaneously isolating non-target circuits during specific data bursts, the system overcomes the electrical loading constraints that typically limit the number of devices per rank. This integration enables a memory module to present a reduced electrical load to the memory controller, thereby facilitating higher memory densities and improved signal integrity without exceeding the physical rank-selection limitations of the host system.

Claims

This patent contains 33 total claims, with claims 1, 15, and 28 serving as the independent claims. The independent claims focus on a memory module architecture featuring a printed circuit board with multiple ranks of memory integrated circuits, control logic, and specialized circuitry designed to manage registered data transfers between the ranks and a data bus by adding a predetermined time delay to ensure the overall CAS latency of the module exceeds the operational CAS latency of the individual memory devices. The dependent claims further define the system by specifying load isolation, the use of logic pipelines, external termination circuits, phase-locked loop clock drivers for synchronous operation, and configurations where pairs of memory devices simulate wider virtual devices.

Key Claim Terms New

Definitions of key terms used in the patent claims.

Term (Source)Support for SpecificationInterpretation
Actual operational CAS latency
(Claim 1, Claim 15, Claim 28)
The overall CAS latency of the memory module is greater than an actual operational CAS latency of each of the plurality of memory integrated circuits. This distinction allows the module to present a specific timing profile to the memory controller while the underlying memory devices operate at their own native latency.The inherent Column Address Strobe (CAS) latency setting of the individual memory integrated circuits, representing the time they take to process a command internally before outputting data.
Logic pipelines
(Claim 28)
The circuitry includes logic pipelines configured to enable data transfers between the first rank and the memory bus in response to the first read or write memory command. These pipelines facilitate the transfer of N-bit wide data signals and data strobes in accordance with the overall CAS latency of the memory module.Circuitry within the buffer or logic component configured to sequence and time the transfer of data and strobe signals to ensure synchronized delivery between the memory bus and the memory ranks.
N-bit wide ranks
(Claim 1, Claim 15, Claim 28)
The DRAM devices of a memory module are generally arranged as ranks or rows of memory, each rank of memory generally having a bit width. For example, a memory module in which each rank of the memory module is 64 bits wide is described as having an “×64” organization. Similarly, a memory module having 72-bit-wide ranks is described as having an “×72” organization.Groups of memory integrated circuits arranged to provide a data width matching the width of the memory module's data bus (N bits), allowing an entire rank to be addressed and accessed simultaneously for data transfers.
Overall CAS latency
(Claim 1, Claim 15, Claim 28)
The circuitry is configured to add a predetermined amount of time delay for each registered data transfer through the circuitry so that the overall CAS latency of the memory module is greater than an actual operational CAS latency of each of the plurality of memory integrated circuits. This delay is introduced by the logic and circuitry used to manage the data bursts.The total delay, measured in clock cycles, between the receipt of a read command by the memory module and the availability of the first data burst on the data bus, accounting for both internal memory device delay and buffer delay.
Registered data transfers
(Claim 1, Claim 15, Claim 28)
The buffer couples the at least one first memory integrated circuit to the data bus and isolates the at least one second memory integrated circuit from the data bus while the memory module is receiving or outputting the first data burst. The circuitry is configured to add a predetermined amount of time delay for each registered data transfer through the circuitry. This allows the memory module to operate at higher frequencies while maintaining signal integrity.Data signal transmissions between the memory controller and the memory devices that are temporarily stored or buffered in circuitry to manage signal integrity and timing, rather than passing directly through an unbuffered path.

Litigation Cases New

US Latest litigation cases involving this patent.

Case NumberFiling DateTitle
2:23-cv-00628Dec 22, 2023Netlist, Inc. v. Micron Technology, Inc. et al

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US10489314

Application Number
US15857519A
Filing Date
Dec 28, 2017
Publication Date
Nov 26, 2019
External Links
Slate, USPTO , Google Patents