Memory module with controlled byte-wise buffers

Patent No. US10949339 (titled "Memory module with controlled byte-wise buffers") on Mar 27, 2017. The application was issued on Mar 16, 2021.

What is this patent about?

’339 is related to the field of high-density memory subsystems, specifically focusing on the architecture of dual in-line memory modules (DIMMs) used in servers and high-performance computing. It addresses the physical and electrical limitations encountered when increasing memory capacity, where adding more DRAM chips typically creates excessive electrical loading and signal degradation on the data bus, ultimately forcing a reduction in system clock speeds.

The underlying idea behind ’339 is to decouple the heavy electrical load of multiple memory ranks from the main system bus by using a distributed buffering architecture. Instead of a single, massive central buffer that creates routing bottlenecks, the invention employs multiple small, byte-wise buffers placed strategically near their respective DRAM groups. This allows the memory controller to see only the load of a single buffer per data path, regardless of how many physical memory ranks are actually populated on the module.

The claims of ’339 focus on a memory module architecture featuring a module controller and a plurality of distributed buffers that manage data flow for multiple N-bit-wide ranks. The independent claims specifically protect the use of tristate buffers within these distributed components to actively drive data during specific time windows defined by CAS latency. This mechanism ensures that only the targeted rank is electrically connected to the data bus during a read or write operation, while all other ranks remain isolated.

In practice, the module controller acts as the brain, receiving high-level commands and translating them into localized module control signals. These signals tell the distributed byte-wise buffers exactly when to open their data paths and in which direction. By using bit slicing, the module handles data in manageable segments, such as 8-bit bytes, which allows for tighter timing control and better signal integrity across the PCB compared to traditional unbuffered or centrally buffered designs.

This approach differentiates itself from prior 'fly-by' architectures by eliminating the massive RC load that usually slows down multi-rank modules. Unlike standard LRDIMMs that might use a single large buffer, this distributed load-reduction strategy minimizes trace lengths between the buffers and DRAMs. This restores the signal waveform shapes and enables the memory to operate at higher frequencies and densities without the 'dead cycles' or collisions typically associated with heavily loaded memory channels.

How does this patent fit in bigger picture?

Technical Landscape

In the late 2000s when ’339 was filed, memory subsystems were typically implemented using standardized dual in-line memory modules where the memory controller directly managed a limited number of physical ranks via a fixed set of control and data lines. At a time when systems commonly relied on direct electrical coupling between the memory controller and individual DRAM devices, hardware constraints made increasing memory density non-trivial due to the proportional increase in electrical loading and signal degradation on the data bus. During this era, expanding addressable memory space beyond the physical constraints defined by industry-standard architectures often required significant design changes to the host system's memory controller or motherboard logic.

Prosecution Position

The disclosed invention achieves a technical advancement in memory density and signal integrity through an architectural shift that decouples the memory controller from the physical DRAM devices. By integrating a module controller with a plurality of distributed byte-wise buffers, the system enables the management of multiple high-density ranks while presenting only a single device load to the memory controller for each data line. This structural solution allows for the expansion of addressable memory space without modifying the host system's physical address bits or chip-select limitations. The technical effect is a high-capacity memory module that maintains operational speed and signal quality by using localized logic to actively drive byte-wise sections of the data signal based on rank-specific control signals.

Claims

This patent includes a total of 35 claims, with claims 1, 11, 19, and 27 serving as the independent claims. The independent claims focus on a memory module architecture featuring a module controller and a plurality of distributed data buffers or transmission circuits that manage N-bit-wide data paths between a memory controller and multiple ranks of DDR DRAM devices by utilizing tristate buffers and logic to enable specific data paths during defined time periods based on latency parameters. The dependent claims further define the system by specifying DRAM bit widths, detailing the internal configuration of the data buffers including input and tristate buffer sets, refining the timing and rank selection logic, and characterizing the electrical loading presented to the memory controller.

Key Claim Terms New

Definitions of key terms used in the patent claims.

Term (Source)Support for SpecificationInterpretation
Byte-wise buffers
(Claim 1)
The memory module further comprises a plurality of byte-wise buffers coupled to the circuit board and configured to receive the second module control signals. Each respective byte-wise buffer of the plurality of byte-wise buffers is coupled to a respective set of the plurality of sets of data signal lines and to at least one respective DDR DRAM device in each of the multiple ranks. The plurality of byte-wise buffers are disposed on the module board at respective positions corresponding to respective sets of the plurality of sets of data signal lines.Individual integrated circuit components positioned on the PCB that manage data signals for a specific 8-bit (one byte) segment of the total memory module width, providing isolated data paths between the memory controller and the DRAM devices.
Latency parameter
(Claim 1, Claim 11)
In certain embodiments, the control circuit controls the byte-wise buffers in accordance with a CAS latency parameter. The byte-wise data path is enabled for a first time period in accordance with a latency parameter to actively drive a respective byte-wise section of the N-bit wide write data.A timing value (such as CAS latency) used by the module logic to determine the specific time window during which the data buffers should be enabled or disabled to align with the memory controller's expectations.
Module controller
(Claim 1, Claim 11, Claim 19, Claim 27)
The module controller is configured to register input address and control signals for a read or write operation received from the memory controller via the set of address and control signal lines, and to output registered address and control signals onto the set of registered control lines. The module controller is further configured to output a set of module control signals in response to the input control signals, the set of module control signals including signals that are dependent on which of the multiple N-bit-wide ranks is the specific N-bit-wide rank.A component on the memory module that registers incoming address and control signals from the computer system's memory controller and generates internal module control signals to manage the buffers and memory ranks.
N-bit-wide ranks
(Claim 1, Claim 11, Claim 19)
The memory devices of a memory module are generally arranged as ranks or rows of memory, each rank of memory generally having a bit width. The memory module further comprises memory devices such as double data rate dynamic random access memory (DDR DRAM) devices coupled to the module board and arranged in multiple ranks each of the same width (i.e., N bits) as the memory module.A logical grouping of DRAM devices that collectively match the full data bit width (N) of the memory module, where multiple such groupings exist on a single module to increase density.
Registered address and control signals
(Claim 1, Claim 11, Claim 19, Claim 27)
The module controller is configured to register input address and control signals for a read or write operation received from the memory controller via the set of address and control signal lines, and to output registered address and control signals onto the set of registered control lines. The read or write operation being targeted at a specific N-bit-wide rank of the multiple N-bit-wide ranks.Signals received from the host memory controller that are buffered or re-driven by the module controller before being distributed to the DRAM devices to maintain signal integrity and timing.
Tristate buffers
(Claim 1, Claim 11, Claim 27)
The byte-wise data path includes first tristate buffers, and the logic in response to the module control signals is configured to enable the first tristate buffers to drive the respective byte-wise section of the N-bit wide write data to the respective module data lines. The first set of tristate buffers are disabled during the second time period; and the second set of tristate buffers are disabled during the first time period.Electronic components within the data path of the byte-wise buffers that can be set to a high-impedance state to effectively disconnect the data path when not in use, preventing signal interference.

Litigation Cases New

US Latest litigation cases involving this patent.

Case NumberFiling DateTitle
2:23-cv-00628Dec 22, 2023Netlist, Inc. v. Micron Technology, Inc. et al
2:22-cv-00203Jun 10, 2022Netlist, Inc. v. Micron Technology, Inc. et al
2:21-cv-00463Dec 20, 2021Netlist, Inc. v. SAMSUNG ELECTRONICS CO., LTD. et al

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US10949339

Application Number
US15470856A
Filing Date
Mar 27, 2017
Publication Date
Mar 16, 2021
External Links
Slate, USPTO , Google Patents