Patent No. US10949339 (titled "Memory module with controlled byte-wise buffers") on Mar 27, 2017. The application was issued on Mar 16, 2021.
’339 is related to the field of high-density memory subsystems, specifically focusing on the architecture of dual in-line memory modules (DIMMs) used in servers and high-performance computing. It addresses the physical and electrical limitations encountered when increasing memory capacity, where adding more DRAM chips typically creates excessive electrical loading and signal degradation on the data bus, ultimately forcing a reduction in system clock speeds.
The underlying idea behind ’339 is to decouple the heavy electrical load of multiple memory ranks from the main system bus by using a distributed buffering architecture. Instead of a single, massive central buffer that creates routing bottlenecks, the invention employs multiple small, byte-wise buffers placed strategically near their respective DRAM groups. This allows the memory controller to see only the load of a single buffer per data path, regardless of how many physical memory ranks are actually populated on the module.
The claims of ’339 focus on a memory module architecture featuring a module controller and a plurality of distributed buffers that manage data flow for multiple N-bit-wide ranks. The independent claims specifically protect the use of tristate buffers within these distributed components to actively drive data during specific time windows defined by CAS latency. This mechanism ensures that only the targeted rank is electrically connected to the data bus during a read or write operation, while all other ranks remain isolated.
In practice, the module controller acts as the brain, receiving high-level commands and translating them into localized module control signals. These signals tell the distributed byte-wise buffers exactly when to open their data paths and in which direction. By using bit slicing, the module handles data in manageable segments, such as 8-bit bytes, which allows for tighter timing control and better signal integrity across the PCB compared to traditional unbuffered or centrally buffered designs.
This approach differentiates itself from prior 'fly-by' architectures by eliminating the massive RC load that usually slows down multi-rank modules. Unlike standard LRDIMMs that might use a single large buffer, this distributed load-reduction strategy minimizes trace lengths between the buffers and DRAMs. This restores the signal waveform shapes and enables the memory to operate at higher frequencies and densities without the 'dead cycles' or collisions typically associated with heavily loaded memory channels.
In the late 2000s when ’339 was filed, memory subsystems were typically implemented using standardized dual in-line memory modules where the memory controller directly managed a limited number of physical ranks via a fixed set of control and data lines. At a time when systems commonly relied on direct electrical coupling between the memory controller and individual DRAM devices, hardware constraints made increasing memory density non-trivial due to the proportional increase in electrical loading and signal degradation on the data bus. During this era, expanding addressable memory space beyond the physical constraints defined by industry-standard architectures often required significant design changes to the host system's memory controller or motherboard logic.
The disclosed invention achieves a technical advancement in memory density and signal integrity through an architectural shift that decouples the memory controller from the physical DRAM devices. By integrating a module controller with a plurality of distributed byte-wise buffers, the system enables the management of multiple high-density ranks while presenting only a single device load to the memory controller for each data line. This structural solution allows for the expansion of addressable memory space without modifying the host system's physical address bits or chip-select limitations. The technical effect is a high-capacity memory module that maintains operational speed and signal quality by using localized logic to actively drive byte-wise sections of the data signal based on rank-specific control signals.
This patent includes a total of 35 claims, with claims 1, 11, 19, and 27 serving as the independent claims. The independent claims focus on a memory module architecture featuring a module controller and a plurality of distributed data buffers or transmission circuits that manage N-bit-wide data paths between a memory controller and multiple ranks of DDR DRAM devices by utilizing tristate buffers and logic to enable specific data paths during defined time periods based on latency parameters. The dependent claims further define the system by specifying DRAM bit widths, detailing the internal configuration of the data buffers including input and tristate buffer sets, refining the timing and rank selection logic, and characterizing the electrical loading presented to the memory controller.
Definitions of key terms used in the patent claims.
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