Flash-Dram Hybrid Memory Module
Patent No. US11016918 (titled "Flash-Dram Hybrid Memory Module") was filed by Netlist Inc on Dec 30, 2020.
What is this patent about?
’918 is related to the field of computer memory, specifically to memory modules that interface with a host system. The background involves increasing data transfer demands in computing, where CPUs struggle to efficiently move data between high-speed processors and slower storage like SSDs or HDDs. Existing solutions like Flash-based DIMMs have limitations, particularly a disparity between read and write speeds, hindering overall system performance.
The underlying idea behind ’918 is to improve memory module efficiency by using multiple buck converters to provide different regulated voltages to various components on the memory module. This allows for optimized power delivery to components like SDRAM devices and registers, enhancing performance and potentially reducing power consumption. A key aspect is the use of a converter circuit to generate a fourth regulated voltage, further refining power distribution.
The claims of ’918 focus on a memory module comprising a PCB with an interface for connecting to a host system. The module includes multiple buck converters (first, second, and third) and a converter circuit to generate four regulated voltages. The claims cover the configuration of SDRAM devices connected to the first regulated voltage, and a circuit or registers that receive address and control signals from the host and output them to the SDRAM, with these circuits powered by the second and fourth regulated voltages.
In practice, the memory module utilizes the buck converters to supply appropriate voltages to different components. For example, SDRAM devices might require a specific voltage level provided by the first buck converter, while registers or other control circuits use voltages from the second and fourth converters. The voltage monitor circuit ensures that the input voltage stays within acceptable limits, triggering a signal if it exceeds a threshold, protecting the module from overvoltage conditions.
This design differentiates itself by optimizing power delivery through multiple voltage rails. Unlike simpler memory modules that might rely on a single voltage source, ’918 tailors the voltage to each component's needs. The ability to selectively switch the second regulated voltage to the registers allows for decoupling the SDRAM from control signals, potentially enabling power saving or diagnostic modes. The voltage monitor adds a layer of protection against voltage fluctuations, enhancing the module's reliability.
How does this patent fit in bigger picture?
Technical landscape at the time
In the mid-2000s when ’918 was filed, at a time when memory modules commonly relied on separate DRAM and Flash memory components, integrating these different memory types into a single module presented challenges. Specifically, managing power distribution and signal integrity across different memory technologies within a single module was non-trivial, especially when systems commonly relied on parallel bus architectures for memory access.
Novelty and Inventive Step
The examiner approved the claims due to a specific combination of elements: multiple buck converters providing regulated voltages with different amplitudes, SDRAM devices connected to one of these voltages, and a circuit coupled between edge connections and the SDRAM devices. This circuit receives address and control signals and outputs modified signals to the SDRAM. The examiner also considered the inclusion of components coupled to a PCB, including SDRAM devices, and a voltage monitor circuit that responds to input voltage levels exceeding a threshold. The examiner stated that the cited prior art, Chen et al., Bates, and Prete et al., did not anticipate or render obvious this combination.
Claims
This patent contains 30 claims, with independent claims 1, 16, and 23. The independent claims generally focus on a memory module comprising a printed circuit board, multiple buck converters providing regulated voltages, and synchronous dynamic random access memory (SDRAM) devices. The dependent claims generally elaborate on specific features, configurations, and functionalities of the memory module components described in the independent claims.
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Date
Description
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US11016918
- Application Number
- US17138766
- Filing Date
- Dec 30, 2020
- Status
- Granted
- Expiry Date
- Jun 2, 2028
- External Links
- Slate, USPTO, Google Patents