Method and apparatus for optimizing driver load in a memory package

Patent No. US8787060 (titled "Method and apparatus for optimizing driver load in a memory package") on Nov 3, 2011. The application was issued on Jul 22, 2014.

What is this patent about?

’060 is related to the field of high-density memory systems, specifically focusing on the architecture of three-dimensional stacked (3DS) memory packages. In traditional stacked memory, multiple array dies are connected to a single vertical interconnect, creating a significant capacitive load that requires large, power-hungry drivers on the control die. As memory density increases and physical dimensions shrink, this parasitic loading becomes a bottleneck for both power efficiency and signal integrity, limiting the overall speed and performance of the memory module.

The underlying idea behind ’060 is to reduce the electrical load on individual drivers by partitioning the vertical interconnects into multiple, isolated segments. Instead of a single bus connecting all dies in a stack to one driver, the invention splits the dies into distinct groups, each served by its own dedicated die interconnect and corresponding driver on the control die. By distributing the total stack capacitance across several smaller conduits, the system can utilize smaller, faster drivers that consume less power while maintaining high signal quality across the entire stack.

The claims of ’060 focus on a memory package architecture where a plurality of stacked array dies are divided into at least two exclusive groups. A first die interconnect is electrically coupled only to the first group, while a second die interconnect is coupled only to the second group. A control die manages these paths through a multi-conduit data path connected to a single external data terminal. The control die includes logic to selectively activate the specific driver and interconnect path required to reach a target die based on incoming chip-select and control signals.

In practice, this mechanism functions as a load-balancing system within the package. When the memory controller targets a specific die, the control die identifies which group that die belongs to and enables only the relevant data conduit. Because each driver only 'sees' the capacitance of a subset of the dies and a shorter effective length of the vertical via, the transition times are improved. This architecture allows the package to appear as a single-die load to the external system bus while internally managing a complex, high-capacity stack.

This approach differs from prior solutions that relied on a single, heavily loaded through-silicon via (TSV) for all dies in a stack. By implementing selective isolation at the interconnect level, the invention avoids the latency penalties and signal degradation inherent in driving a large number of parallel loads. Furthermore, the control die is designed to be versatile, supporting both standard registered DIMM operations and advanced 3DS modes, effectively bridging the gap between high-capacity storage and high-speed data transfer requirements.

How does this patent fit in bigger picture?

Technical Landscape

In the early 2010s when ’060 was filed, memory module design was increasingly focused on high-density configurations where multiple semiconductor dies were integrated into single packages. At a time when memory capacity was typically scaled by increasing the number of array dies sharing a common internal bus, system performance was often limited by the cumulative electrical load placed on the package drivers. When systems commonly relied on a single die interconnect to route signals to all dies within a package, the resulting capacitive and inductive loading made high-speed signaling and low power consumption non-trivial. Hardware constraints during this era meant that as the physical dimensions of memory packages decreased, the parasitic load of the interconnect traces themselves became a significant factor alongside the load of the memory cells, complicating the ability of standard drivers to maintain signal integrity without excessive power draw.

Prosecution Position

The disclosed invention represents a technical advancement in memory architecture through the implementation of a load-balanced, multi-conduit control die interface for three-dimensional stacked memory. The solution shifts from a single-bus architecture to a segmented approach where a control die utilizes multiple independent data conduits and die interconnects to isolate subsets of array dies. This architectural shift allows for the distribution of electrical loads across multiple drivers, specifically accounting for both the individual array die loads and the non-negligible loads of the interconnect segments themselves. By selectively forming electrical connections to exclusive subsets of dies, the system achieves a balanced load profile that enables the use of smaller, lower-power drivers while maintaining high-speed signal transmission. This configuration overcomes the technical constraint of driver saturation in high-density packages, enabling more efficient power management and improved thermal performance in stacked memory modules.

Claims

The patent contains a total of 34 claims, with claims 1, 11, 20, and 29 serving as the independent claims. These independent claims focus on a memory package architecture and related method featuring a stack of array dies divided into separate groups, where a control die manages data communication between external terminals and specific die groups through dedicated interconnects and data conduits. The dependent claims further define the system by specifying the use of through-silicon vias, detailing the generation and routing of chip-select and data path control signals, optimizing driver sizes and load balancing between die groups, and implementing the technology within a memory module utilizing a register device.

Key Claim Terms New

Definitions of key terms used in the patent claims.

Term (Source)Support for SpecificationInterpretation
Chip select conduits
(Claim 11, Claim 29)
The control die comprises chip select conduits for providing chip select signals to respective array dies. The control die further comprises a control circuit to control respective states of the first data conduit and the second data conduit to drive a data signal to an array die selected by at least one of the chip-select signals. The chip select signals are related to at least some of the control signals.Dedicated electrical paths within the control die used to transmit chip-select signals to specific array dies to activate them for data operations.
Control die
(Claim 1, Claim 11, Claim 20, Claim 29)
The control die comprises at least a first data conduit configured to transmit a data signal to the first die interconnect and to not transmit the data signal to the second die interconnect. The control die comprises a plurality of command/address buffers and a data path control circuit configured to control command/address time slots and data bus time slots. The control die is configured to receive data signals from the memory control hub and command/address signals from the register device.A specialized semiconductor die within a memory package that manages signal routing, load balancing, and data path control between external package terminals and the internal array dies.
Data conduit
(Claim 1, Claim 11, Claim 29)
The control die comprises at least a first data conduit configured to transmit a data signal to the first die interconnect and to not transmit the data signal to the second die interconnect. A first load on the first conduit comprises a load of the first die interconnect, a load of the first array die, and a load of the second array die. Certain embodiments account for both the loads of the array dies and the loads of the die interconnects on a conduit (e.g., driver).An internal signal path or driver circuit within the control die designed to selectively route data signals to specific die interconnects while isolating others to manage electrical load.
Die interconnect
(Claim 1, Claim 11, Claim 20, Claim 29)
The first die interconnect is in electrical communication with at least one data port of a first array die and a second array die and not in electrical communication with the data ports of at least a third array die. As the physical size of a memory package shrinks, the load of a die interconnect becomes a non-negligible value relative to the load of the array dies. Certain embodiments account for both the loads of the array dies and the loads of the die interconnects on a conduit.A conductive path or electrical connection segment within a memory package that links a control die to a specific subset of array dies to transmit data or signals.
Stacked array dies
(Claim 1, Claim 11, Claim 20, Claim 29)
Each array die may include an individual semiconductor chip that includes a number of memory cells. The memory package may itself include a number of array dies that are packaged together. The apparatus comprises a plurality of array dies arranged in a stack.A plurality of individual semiconductor memory chips (such as DDR DRAM) that are physically layered or arranged in a vertical stack within a single memory package to increase density.

Litigation Cases New

US Latest litigation cases involving this patent.

Case NumberFiling DateTitle
2:23-cv-00628Dec 22, 2023Netlist, Inc. v. Micron Technology, Inc. et al
2:22-cv-00203Jun 10, 2022Netlist, Inc. v. Micron Technology, Inc. et al

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US8787060

Application Number
US13288850A
Filing Date
Nov 3, 2011
Publication Date
Jul 22, 2014
External Links
Slate, USPTO , Google Patents