The detailed information for PTAB case with proceeding number IPR2017-01842 filed by Taiwan Semiconductor Manufacturing Company Limited against Godo Kaisha IP Bridge 1 on Jul 26, 2017. This includes filing dates, application numbers, tech centers, patent numbers, and current case status.

Case Details

Proceeding Number
IPR2017-01842
Filing Date
Jul 26, 2017
Petitioner
Taiwan Semiconductor Manufacturing Company Limited
Respondent
Godo Kaisha IP Bridge 1
Status
Terminated-Settled
Respondent Application Number
12170191
Respondent Tech Center
2800
Respondent Patent Number
7893501
Institution Decision Date
Feb 6, 2018
Termination Date
Jan 24, 2019

Proceeding Documents

The table below shows documents filed in the case, listing each document name, filing date, document type, and filing party. Tracking these filings indicates the activity of the parties involved in the case, and the types of documents filed can provide insights into the legal strategies being employed.


Document NameFiling DateCategoryFiling Party

Alert me when new update on this case

Termination Decision Document

Jan 24, 2019PAPERBOARD

Hearing Transcript

Oct 17, 2018PAPERBOARD

Decision - Institution of Inter Partes Review

Feb 6, 2018PAPERBOARD

Petitioner's Updated Exhibit List

Jan 9, 2018PAPERPETITIONER

December 19, 2017 Conference Call Transcript

Jan 9, 2018EXHIBITPETITIONER

Infringement contentions dated February 1 2017

Jan 9, 2018EXHIBITPETITIONER

Denying Petitioner's Request to File Reply to Preliminary Response

Dec 29, 2017PAPERBOARD

Patent Owner's Corrected Certificate of Word Count Under 37 C.F.R. 42.24(d)

Nov 8, 2017PAPERPATENT OWNER

Patent Owner's Preliminary Response

Nov 7, 2017PAPERPATENT OWNER

Patent Owner's Mandatory Notices

Aug 11, 2017PAPERPATENT OWNER

Power of Attorney

Aug 11, 2017PAPERPATENT OWNER

Notice of Accord Filing Date

Aug 8, 2017PAPERBOARD

Applicants Amendment and Response dated August 6, 2010

Jul 26, 2017EXHIBITPETITIONER

U.S. Patent Publication No. 2002/0000611 to Hokazono et al. (Hokazono)

Jul 26, 2017EXHIBITPETITIONER

U.S. Patent No. 6,228,777 (Arafa)

Jul 26, 2017EXHIBITPETITIONER

Fumio Shimura, Semiconductor Silicon Crystal Technology, at 104-112 (1989) (Shimura Textbook)

Jul 26, 2017EXHIBITPETITIONER

W.O. Publication No. 2002/043151 with certified English translation (Shimizu)

Jul 26, 2017EXHIBITPETITIONER

M. Green et al., Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits, J. Appl. Phys., Vol. 90, No. 5, at 2057-2121 (Sep. 1, 2001)

Jul 26, 2017EXHIBITPETITIONER

H. Wong, Beyond the conventional transistor, IBM Journal of Research and Development, Vol. 46, No. 2/3, at 133-168 (March/May 2002)

Jul 26, 2017EXHIBITPETITIONER

U.S. Patent No. 5,726,479

Jul 26, 2017EXHIBITPETITIONER

U.S. Patent No. 6,512,266

Jul 26, 2017EXHIBITPETITIONER

U.S. Patent No. 7,893,501

Jul 26, 2017EXHIBITPETITIONER

U.S. Patent Publication No. 2002/0145156 to Igarashi et al. (Igarashi)

Jul 26, 2017EXHIBITPETITIONER

U.S. Patent No. 5,960,270 to Misra et al. (Misra)

Jul 26, 2017EXHIBITPETITIONER

J. Plummer et al., Silicon VLSI Technology: Fundamentals, Practice and Modeling, (1st ed. 2000)

Jul 26, 2017EXHIBITPETITIONER

U.S. Patent No. 6,406,963 to Woerlee et al. (Woerlee)

Jul 26, 2017EXHIBITPETITIONER

J. Rabaey et al., Digital Integrated Circuits, at 40-44 (2d ed. 2003)

Jul 26, 2017EXHIBITPETITIONER

S. Kang and Y. Leblebici, CMOS Digital Integrated Circuits: Analysis and Design, (2d. ed. 2003)

Jul 26, 2017EXHIBITPETITIONER

K. Maex, Simply irresistible silicides, Physics World, at 35-39 (Nov. 1995)

Jul 26, 2017EXHIBITPETITIONER

Notice of Allowance dated October 15, 2010

Jul 26, 2017EXHIBITPETITIONER

U.S. Patent No. 6,444,566 to Tsai et al. (Tsai)

Jul 26, 2017EXHIBITPETITIONER

J. Moon et al., A New LDD Structure: Total Overlap with Polysilicon Spacer (TOPS), IEEE Electron Device Letters, Vol. 11, No. 5, at 221-223 (May 1990)

Jul 26, 2017EXHIBITPETITIONER

D. Baglee et al., Reduced Hot-Electron Effects in MOSFETs with an Optimized LDD Structure, IEEE Electron Device Letters, Vol. EDL-5, No. 10, at 389-391 (Oct. 1984)

Jul 26, 2017EXHIBITPETITIONER

E. Gusev et al., Growth and characterization of ultrathin nitride silicon oxide films, IBM J. Res. And Dev., Vol. 43, No. 3, at 265-286 (May 3, 1999)

Jul 26, 2017EXHIBITPETITIONER

U.S. Patent No. 6,509,234

Jul 26, 2017EXHIBITPETITIONER

Mizuno, T. et al., Hot-Carrier Injection Suppression Due to the Nitride-Oxide LDD Spacer Structure, IEEE Trans. Electron Dev., Vol. 38, No. 3, March, 1991 (Mizuno)

Jul 26, 2017EXHIBITPETITIONER

High k dielectrics - Current status and Materials Properties Considerations, Wilk, G.D., et al., J. App. Phy. Vol. 89, No. 10, May 15, 2001

Jul 26, 2017EXHIBITPETITIONER

U.S. Patent No. 6,806,584

Jul 26, 2017EXHIBITPETITIONER

Togo, M. et al. Low Leakage and High Reliability 1.5 nm SiON Gate-Dielectric Using Radical Oxynitridation for Sub-0.1 um CMOS, 2000 Symposium on VLSI Technology Digest of Technical Papers (2000) (Togo)

Jul 26, 2017EXHIBITPETITIONER

Power of Attorney

Jul 26, 2017PAPERPETITIONER

Petition for Inter Partes Review

Jul 26, 2017PAPERPETITIONER

Declaration of Stanley R. Shanfield, Ph.D. Regarding U.S. Patent No. 7,893,501, Claims 5, 6, 12, 13, 15, 19, and 21 (Shanfield Decl.)

Jul 26, 2017EXHIBITPETITIONER