Taiwan Semiconductor Manufacturing Company Limited vs Godo Kaisha IP Bridge 1

Termination Decision Document

Hearing Tarnscript

Decision - Institution of Inter Partes Review

Petitioner's Updated Exhibit List

December 19, 2017 Conference Call Transcript

Infringement contentions dated February 1 2017

Denying Petitioner's Request to File Reply to Preliminary Response

U.S. Patent No. 6,870,230 ("Matsuda")

EXPUNGED

Request for Continued Examination dated March 29, 2010

U.S. Patent No. 6,437,404 ("Xiang")

Office Action dated March 29, 2010

U.S. Patent No. 3,390,022

McGraw-Hill Dictionary of Scientific and Technical Terms (2003)

Corrected Patent Owner's Preliminary Response

Patent Owner's Mandatory Notices

Power of Attorney

Notice of Accord Filing Date

U.S. Patent No. 7,893,501

U.S. Patent No. 5,960,270 to Misra et al. (Misra)

U.S. Patent No. 5,472,890 to Oda (Oda)

U.S. Patent Publication No. 2002/0000611 to Hokazono et al. (Hokazono)

U.S. Patent Publication No. 2002/0145156 to Igarashi et al. (Igarashi)

J. Rabaey et al., Digital Integrated Circuits, at 40-44 (2d ed. 2003) (Rabaey)

Togo, M. et al. Low Leakage and High Reliability 1.5 nm SiON Gate-Dielectric Using Radical Oxynitridation for Sub-0.1 um CMOS, 2000 Symposium on VLSI Technology Digest of Technical Papers (2000) (Togo)

U.S. Patent No. 6,806,584

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K.B. Sundaram et al., Fabrication of Metal Field Effect Transistors Using Silicon Nitride and Silicon-Oxynitride as Gate Insulators, Electrochemical Proceedings, vol. 97-10 (1997) (Sundaram)

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W.O. Publication No. 2002/043151 with certified English translation (Shimizu)

Applicants Amendment and Response dated August 6, 2010

U.S. Patent No. 6,072,237 to Jang et al. (Jang)

J. Plummer et al., Silicon VLSI Technology: Fundamentals, Practice, and Modeling, (1st ed. 2000)

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U.S. Patent Application No. 2003/0011043 (Roberts)

U.S. Patent No. 4,951,100 (Parrillo)

U.S. Patent No. 6,110,827 to Chien et al. (Chien)

U.S. Patent No. 6,444,566 to Tsai et al. (Tsai)

U.S. Patent No. 6,228,777 (Arafa)

U.S. Patent No. 6,509,234

U.S. Patent No. 5,726,479

U.S. Patent No. 6,512,266

J. Moon et al., A New LDD Structure: Total Overlap with Polysilicon Spacer (TOPS), IEEE Electron Device Letters, Vol. 11, No. 5, at 221-223 (May 1990)

U.S. Patent No. 6,383,906 to Wieczorek et al. (Wieczorek)

U.S. Patent No. 5,286,344 to Blalock et al. (Blalock)

Interaction of Transition Metals with Silicon (100): The Ni-Si, Co-Si and Au/Si(100) Systems, by Steven Naftel, Graduate Program in Chemistry, The University of Western Ontario, July 1999 (Naftel)

Notice of Allowance dated October 15, 2010

U.S. Patent No. 6,326,301 to Venkatesan et al. (Venkatesan)

M. Green et al., Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits, J. Appl. Phys., Vol. 90, No. 5, at 2057-2121 (Sep. 1, 2001)

Power of Attorney

Shanfield Declaration

Petition