Satco Products, Inc. vs Seoul Semiconductor Co., Ltd. et al.

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Petitioner's Notice of Appeal

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Petitioner's Motion Under 37 C.F.R. Sect. 42.71 for Rehearing of Sua Sponte Order Withdrawing Pro Hac Vice Admission of Nicholas A. Brown

Petitioner's Second Updated Exhibit List

Declaration Of Nicholas A. Brown In Support Of Motion of Petitioner's Motion Under 37 C.F.R. Sect. 42.71 for Rehearing of Sua Sponte Order Withdrawing Pro Hac Vice Admission of Nicholas A. Brown

Affidavit For Pro Hac Vice Application Submitted In Signify North America Corporation et al. v. Satco Products, Case No. 2:19-cv-06125 (E.D.N.Y.)

Local Rules of the United States District Courts for the Southern and Eastern Districts of New York (Excerpts)

Affidavit For Pro Hac Vice Application Submitted In Seoul Semiconductor Co., Ltd. et al. v. Satco Products, Inc., Case No. 1:19-cv-06719 (E.D.N.Y.)

Certification By Counsel To Be Admitted Pro Hac Vice Submitted In Elm 3DS Innovations LLC v. SK hynix Inc., et al., Case No. 1:14-cv-01432 (D.Del.)

Local Rules Of Civil Practice And Procedure Of The United States District Court For The District of Delaware (Excerpts)

Certification For Pro Hac Vice Application Submitted In By Counsel To Be Admitted Pro Hac Vice Submitted In Battery Conservation Innovations, LLC v. Segway Inc., Case No. 1:19-cv-00850 (D.Del.).

Affidavit For Pro Hac Vice Application Submitted In Seoul Semiconductor Co., Ltd. et al v. Satco Products, Inc., Case No. 2:19-cv-04951 (E.D.N.Y.)

Motion To Appear Pro Hac Vice And Certification Submitted In Seoul Semiconductor Co., Ltd. et al. v. Satco Products, Inc., Case No. 1:19-cv-21507 (S.D.Fla.)

Local Rules Of The United States District Court for the Southern District of Florida (Excerpts)

Affidavit For Pro Hac Vice Application Submitted In RELX Inc. v. Informatica Corp., Case No. 1:16-cv-09718 (S.D.N.Y.)

Certificate Of Good Standing, Supreme Court of the United States

Application For Admission To Practice, Supreme Court of the United States

Certificate Of Good Standing, United States District Court, Eastern District of Texas

Local Rules Of The United States District Court for the Eastern District of Texas (Excerpts)

Declaration of Michael E. McCabe, Jr. in Support of Petitioner's Motion Under 37 C.F.R. Sect. 37 C.F.R. 42.71 for Rehearing of Sua Sponte Order Withdrawing Pro Hac Vice Admission of Nicholas A. Brown

ABA Model Rule on Pro Hac Vice Admission (Aug. 12, 2002)

ABA Model Rule on Pro Hac Vice Admission (Feb. 11, 2013)

Patent Owner's Updated Mandatory Notices Under 37 C.F.R. �� 42.8

Patent Owner's Sur-Reply

Exhibit 2019

Exhibit 2020

ORDER - Withdrawing Pro Hac Vice Admission of Nicholas A. Brown 37 C.F.R. 42.10c

Petitioner's Request for Oral Hearing

Patent Owner's Request for Oral Argument

Patent Owner's Notice of Deposition of F. Ponce

Patent Owner's Notice of Deposition of R. Dupuis

Patent Owner's Objections to Petitioner's Evidence

Petitioner's Reply to Patent Owner's Response

Seoul Semiconductor Co., Ltd. v. Healthe, Inc., No. 6:19-cv-02264-PGB-EJK, Dkt. 55 (Dec. 23, 2020) (Joint Pre-Hearing Statement)

Seoul Semiconductor Co., Ltd. v. Vividgro, Inc., No. 6:19-cv-02263-CEM-EJK, Dkt. 55 (Dec. 23, 2020) (Joint Pre-Hearing Statement)

U.S. Patent No. 8,847,254 to Roth, et al.

Transcript of the Deposition of William Alan Doolittle, Ph.D. (Dec. 10, 2020) with errata sheet

Seoul Semiconductor Co. Ltd. v. Satco Prods., Inc., No. 2:19-cv-04951, Dkt. 56 (filed Jul. 9, 2020), Plaintiffs¿¿¿ Opening Claim Construction Brief

Declaration of Fernando Ponce, Ph.D.

U.S. Patent No. 7,858,962 to Smith et al.

Y K Su, et al., InGaN/GaN blue light-emitting diodes with self-assembled quantum dots, Semicond. Sci. Technol. 19 (2004) 389-392

T. Li, et al., Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope, Appl. Phys. Lett. 86, 241911 (2005)

Declaration of Russell D. Dupuis, Ph.D. in Response to Declaration of Alan Doolittle, Ph.D.

F. A. Ponce, D. P. Bour, W. Gotz, and P. J. Wright, Spatial distribution of the luminescence in GaN thin films. Appl. Phys. Lett. 68, 57-59 (1996).

F. A. Ponce, T. D. Moustakas, I. Akasaki, B. Monemar, eds. III-V Nitrides. Materials Research Society (Pittsburgh, Pennsylvania, 1997); Vol. 449, pp. 1-1251 (ISBN 1-55899-353-3).

F. A. Ponce, S. P. DenBaars, B. K. Meyer, S. Nakamura, S. Strite, eds. Nitride Semiconductors. Materials Research Society (Pittsburgh, Pennsylvania, 1998); Vol. 482, pp. 1-1224 (ISBN 1-55899-387-8)

F. A. Ponce and A. Bell, eds. Advances in Nitride Semiconductors

F. A. Ponce, D. Cherns, W. T. Young, and J. W. Steeds, Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques. Appl. Phys. Lett. 69, 770-772 (1996).

D. Cherns, S. J. Henley, and F. A. Ponce, Edge and screw dislocations as non-radiative centers in InGaN/GaN quantum well luminescence. Appl. Phys. Lett. 78, 2691-2693 (2001).

S. Chichibu, K. Wada, and S. Nakamura, Luminescences from localized states in InGaN epilayers. Appl. Phys. Lett. 70, 2822-2824 (1997).

U.S. Patent No. 8,405,304 to Choi et al.

U.S. Patent No. 10,622,525 to Kim et al.

U.S. Patent No. 8,334,157 to Smeeton et al.

S. Nakamura, T. Mukai, and M. Senoh, Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes, Appl. Phys. Lett. 64, 1687-1689.

S. Nakamura, InGaN/AlGaN double-heterostructure blue LEDs

S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, High dislocation densities in high efficiency GaN-based light-emitting diodes. Appl. Phys. Lett. 66, 1249-1251 (1994)

F. A. Ponce, R. D. Dupuis, S. Nakamura and J. A. Edmond, eds. Gallium Nitride and Related Materials. Materials Research Society (Pittsburgh, Pennsylvania, 1996); Vol. 395, pp. 1-995 (ISBN 1-55899-298-7)

F. A. Ponce, Defects and Interfaces in GaN Epitaxy. MRS Bull. 22, 51-57 (1997).

S. Chichibu, K. Wada, and S. Nakamura, Spatially resolved cathodoluminescence spectra of InGaN quantum wells. Appl. Phys. Lett. 71, 2346-2348 (1997).

I. L. Krestnikov, et al, Quantum dot origin of luminescence in InGaN-GaN structures. Phys. Rev. B 66, 155310 (2002).

F. A. Ponce, et al, Microstructure and electronic properties of InGaN alloys. Phys. Status Solidi B 240, 273-284 (2003).

F. A. Ponce, D. Cherns, W. Goetz, and R. S. Kern, Microstructure of InGaN quantum wells. MRS Symp. Proc. 482, 453-458 (1997).

Y. Narukawa, Y. Kawakami, M. Funato. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm. Appl. Phys. Lett. 70, 981-983 (1997).

K. P. O¿¿¿Donnell, R. W. Martin, and P. G. Middleton, Origin of luminescence from InGaN diodes. Phys. Rev. Lett. 82, 237-240 (1999).

R. W. Martin, P. G. Middleton, K. P. O¿¿¿Donnell, W. Van der Stricht, Exciton localization and the Stokes¿¿¿ shift in InGaN epilayers. Appl. Phys. Lett. 74, 263-265 (1999).

Q. Li, et al, Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys. Appl. Phys. Lett. 79, 1810-1812 (2001).

Y-H Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, ¿¿¿S-shaped¿¿¿ temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells. Appl. Phys. Lett. 73, 1370-1372 (1998).

Y. Kawakami, K. Omae, A. Kaneta, K. Okamoto, Y. Narukawa, T. Mukai, and S. Fujita, In inhomogeneity and emission characteristics of InGaN. J. Phys.: Condens. Matter 13, 6993-7010 (2001).

R. Seguin, et al, Multi-excitonic complexes in single InGaN quantum dots. Appl. Phys. Lett. 84, 4023-4025 (2004).

O. Moriwaki, T. Someya, K. Tachibana, S. Ishida, Y. Arakawa, Narrow photoluminescence peaks from localized states in InGaN quantum dot structures. Appl. Phys. Lett. 76, 2361-2363 (2000).

H. Schomig, et al, Probing individual localization centers in an InGaN/GaN quantum well. Phys. Rev. Lett. 92, 106802 (2004).

G. B. Stringfellow, Microstructures produced during the epitaxial growth of InGaN alloys. J. Crystal Growth 312, 735-749 (2010).

S. F. Chichibu,et al, Origin of defectinsensitive emission probability of In-containing (Al, In, Ga) N alloy semiconductors, Nature Materials 5, 810-816 (2006).

T. Koukoula, et al, Structure and strain state of polar and semipolar InGaN quantum dots, Applied Surface Science 260, 7-12 (2012).

H. Xie, et al, Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots. Semicond. Sci. Technol. 32, 055013 (2017).

F. A. Ponce, R. Sinclair, R. H. Bube, Native tellurium dioxide layer on cadmium telluride: A high¿¿¿resolution electron microscopy study. Appl. Phys. Lett. 39, 951-953 (1981)

R. Sinclair, T. Yamashita, F. A. Ponce, Atomic motion on the surface of a cadmium telluride single crystal, Nature 290, 386¿¿¿388 (1981)

F. A. Ponce, Fault¿¿¿free silicon at the silicon/sapphire interface. Appl. Phys. Lett. 41, 371-373 (1982)

A. Rosenauer, et al. Composition mapping in InGaN by scanning transmission electron microscopy. Ultramicroscopy 111, 1316-1327 (2011)

T. Li, et al, Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells. Appl. Phys. Lett. 96, 031906 (2010)

Y. Li, et al, Surface morphology and optical properties of InGaN quantum dots with varying growth temperature. Mater. Res. Express 7, 015903 (2020).

H. Xie, et al, Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation. J. Appl. Phys. 120, 034301 (2016).

P.-Y. Su, et al, Effect of InAs quantum dots capped with GaAs on ordering in Ga0.5In0.5P, J. Appl. Phys. 125, 053104 (2019).

D. Gerthsen, et al., Composition Fluctuations in InGaN Analyzed by Transmission Electron Microscopy, phys. stat. sol. (a) 177, 145 (2000)

Patent Owner's Updated Mandatory Notices

Joint Stipulation to Extend Due Dates 2-3

Petitioner's Updated Power of Attorney

Petitioner's Updated Mandatory Notices

PANEL CHANGE ORDER Conduct of the Proceedings 37 C.F.R. ¿¿ 42.5

Petitioner's Notice of Deposition of Alan Doolittle, Ph.D.

Exhibit 2011

Patent Owner's Exhibit List

Exhibit 2011

Petitioner's Objections to Patent Owner's Exhibits

Exhibit 2013

Exhibit 2015

Exhibit 2016

Exhibit 2017

Exhibit 2018

Patent Owner's Response

Exhibit 2012

Exhibit 2014

DECISION Granting Petitioner¿¿¿s Motions for Pro Hac Vice Admission of Scott J. Bornstein, Nicholas A. Brown, and Stephen M. Ullmer 37 C.F.R. ¿¿ 42.10

Petitioner's Motion for Pro Hac Vice Admission of Nicholas A. Brown

Petitioner's Motion for Pro Hac Vice Admission of Scott J. Bornstein

Declaration of Scott J. Bornstein in Support of Motion for Pro Hac Vice Admission

Declaration of Nicholas A. Brown in Support of Motion for Pro Hac Vice Admission

Petitioner's Motion for Pro Hac Vice Admission of Stephen M. Ullmer

Declaration of Stephen M. Ullmer in Support of Motion for Pro Hac Vice Admission

Joint Stipulation to Extend Due Dates 1-3

Patent Owner's Notice of Deposition

Petitioner's Objections to Patent Owner's Exhibits

Trial Instituted Document

Scheduling Order

Patent Owner's Preliminary Response

Exhibit 2001

Exhibit 2002

Exhibit 2003

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Exhibit 2005

Exhibit 2006

Exhibit 2008

Exhibit 2007

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Exhibit 2010

Patent Owner's Updated Mandatory Notices

Corrected Petition for Inter Partes Review of U.S. Patent No. 7,667,225

Notice of Accord Filing Date

Patent Owner's Power of Attorney

Patent Owner's Mandatory Notices

U.S. Patent No. 7,667,225

File History of U.S. Patent Application No. 12/486,267

File History of U.S. Patent Application No. 12/541,749

U.S. Patent Application Publication No. 2006/0081832 A1 to Chen

F.A. Ponce, et al., Nitride-based semiconductors for blue and green light-emitting devices, Nature, Vol. 386, pp. 351-359 (Mar. 27, 1997)

K.P. O'Donnell, et al., Origin of Luminescence from InGaN Diodes, Phys. Rev. Lett. Vol. 82, No. 1, pp.237-240 (Jan. 4, 1999)

V. Lemos, et al., Evidence for Phase-Separated Quantum Dots in Cubic InGaN Layers from Resonant Raman Scattering, Phys. Rev. Lett., Vol. 84, No. 16, pp. 237-240 (Apr. 17, 2000)

T. Li, et al., Indium redistribution in an InGaN quantum well induced by electron beam irradiation in a transmission electron microscope, Appl. Phys. Lett. Vol. 86 (2005) (photocopy of paper copy)

Y.-S. Lin, et al., Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells, Appl. Phys. Lett., Vol. 77, pp.2988-2990 (2000)

P. G. Eliseev, "Blue" temperature-induced shift and band-tail emission in InGaN-based light sources, Appl. Phys. Lett, Vol. 71, pp.569-571 (Aug. 4, 1997)

U.S. Patent No. 6,541,797 to Udagawa

Y.S. Lin, et al., Effects of post-growth thermal annealing on the indium aggregated structures in InGaN/GaN quantum wells, J. Crystal Growth Vol. 242, pp. 35-40 (2002)

U.S. Patent No. 7,271,417 to Chen

E. Fred Schubert, LIGHT-EMITTING DIODES (2d Ed. 2006) (cover page, and other assorted pages)

Shih-Wei Feng, et al., Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing, J. Appl. Phys. Vol. 95, No. 10, pp.5388-5395 (May 10, 2004)

Z.C. Feng, et al., Optical and structural investigation on InGaN/GaN multiple quantum well light emitting diodes grown on sapphire by metalorganic chemical vapor deposition, 6th Int'l Conf. on Solid State Lighting, Proc of SPIE Vol. 6337 (2006).

S. Nakamura, The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes, Science Vol. 281, pp.956-961 (Aug. 14, 1998)

Y.-L. Lai, The Influence of quasi-quantum dots on the physical properties of blue InGaN/GaN multiple quantum wells, Nanotechnology, Vol. 17, pp.4300-4306 (Aug. 8, 2006)

I.-K. Park, et al., Ultraviolet light emitting diodes with self-assembled InGaN quantum dots, Appl. Phys. Lett., Vol. 90 (2007)

J. Gleize, Tight-Binding Simulation of an InGaN/GaN Quantum Well with Indium Concentration Fluctuation, Phys. Stat. Sol., Vol. 0, No. 1, pp.298-301 (2002) (print)

N.A. Shapiro, et al., The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells, MRS Internet J. of Nitride Semicond. Res., Vol. 5, No. 1 (2000)

T. Mukai, et al., Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes, Jpn. Appl. Phys. Vol. 38, pp.3976-3981 (Jul. 1999)

U.S. Patent No. 6,121,634 to Saito et al.

U.S. Patent No. 5,959,307 to Nakamura, et al.

D. Gerthsen, et al., Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy, phys. Stat. sol. (c), 0 No. 6, pp.1668-1683 (2003) (photocopy)

C.H. Kuo, et al., Nitride-based Near-Ultraviolet Multiple Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers, J. Electronic Materials, Vol. 32, No. 5, pp.415-418 (2003)

E. Fred Schubert, LIGHT-EMITTING DIODES (2d Ed. 2006) (pp.27, 35-36, and 44)

H.-C. Wang, Carrier relaxation in InGaNGaN quantum wells with nanometer-scale cluster structures, Appl. Phys. Lett. 85, 1371 (2004).

J. Gleize, Tight-Binding Simulation of an InGaN/GaN Quantum Well with Indium Concentration Fluctuation, Phys. Stat. Sol., Vol. 0, No. 1, pp.298-301 (2002) (web version)

Y. Li, et al., Photon modulated electroluminescence of GaInN/GaN multiple quantum well light emitting diodes, phys. stat. sol. (c), 1-3 (2008) (Apr. 23, 2008)

H. Masui, et al., Electroluminescence efficiency of (1 0 1 ¿¿ 0)-oriented InGaN-based light-emitting diodes at low temperature, J. Phys. D.: Appl. Phys., 41 at p082001 (Mar. 4, 2008).

S. Chichibu, et al., Spontaneous emission of localized excitons in InGaN single and multiple-quantum well structures, Appl. Phys. Lett. 69, p.4188 (1996)

PCT Application Publication WO 00/30178 to Emcore Corp.

Communication dated Mar. 15, 2012 in EP Pat. App. No. 09 010 817.6

Communication dated Aug. 27, 2012 in EP Pat. App. No. 09 010 817.6

U.S. Patent No. 6,541,797 to Udagawa

M.-H. Kim, Origin of efficiency droop in GaN-based light-emitting diodes, Appl. Phys. Lett. 91, 183507 (Oct. 30, 2007)

D. Gerthsen, et al., Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy, phys. Stat. sol. (c), 0 No. 6, pp.1668-1683 (2003) (web version)

A. Knauer, et al., Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes, App. Phys. Lett. 91, p.191912 (2008).

T. Li, et al., Indium redistribution in an InGaN quantum well induced by electron beam irradiation in a transmission electron microscope, Appl. Phys. Lett. Vol. 86 (2005) (web copy)

S.-N. Lee, et al., Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells, J. Crystal Growth, 310, pp.3881-3883 (Jun. 8, 2008)

S.-N. Lee, Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD, J. Crystal Growth 275, pp.e1041-1045 (Dec. 18, 2004)

P. Schley, et al., Dielectric function and Van Hove singularities for In-rich InxGa1-xN alloys: Comparison of N- and metal-face materials, Phys. Rev. B 75, 205204 (2007)

H.-W. Huang, et al., Investigation of GaN LED with Be-implanted Mg-doped GaN layer, Materials Science & Eng¿¿¿g B vol. 113, pp.19-23 (2004).

H.W. Huang, et al., Improvement of InGaN-GaN Light-Emitting Diode Performance With a Nano-Roughened p-GaN Surface, IEEE Photonics Tech. Lett., Vol. 17, No. 5, pp.983-985 (May 2005)

H. K. Cho, et al., Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density, Appl. Phys. Lett., Vol. 79, No. 2, p.215 (Jul. 9, 2001).

Shih-Wei Feng, et al., Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures, J. Appl. Phys., Vol. 92, No. 8, pp.4441-4448 (Oct. 15, 2002)

Yen-Sheng Lin, et al., Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells, Appl. Phys. Lett., Vol. 80, No. 14, pp.2571-2573 (Apr. 2002)

J. P. Liu, Investigations on V-defects in quaternary AlInGaN epilayers, Appl. Phys. Lett., Vol. 84, No. 26, pp.5449-5451 (Jun. 28, 2004).

B. Witzigmann, et al., Analysis of Temperature-Dependent Optical Gain in GaN-InGaN Quantum-Well Structures, IEEE Photonics Tech. Lett., Vol. 18, No. 15, pp.1600-1602 (Aug. 1, 2006).

S.C.P. Rodrigues, et al., Luminescence studies on nitride quaternary alloys double quantum wells, Applied Surface Science 254 (2008) 7790-7792.

Declaration of Dr. Dupuis

M. Feneberg, Mahan excitons in degenerate wurtzite InN: Photluminescense spectroscopy and reflectivity measurements

Declaration of Dr. Hall-Ellis

M. Rakel, et al., GaN and InN conduction-band states by ellipsometry

Petition for Inter Partes Review of U.S. Patent No. 7,667,225

Petitioner's Power of Attorney