General Motors LLC et al. vs Arigna Technology Limited

Final Written Decision: original

Institution Decision: Joined

Patent Owner's Sur-Reply to Petitioner's Preliminary Response Reply

Petitioner's Reply to Patent Owner's Preliminary Response

USPTO Memo on Interim Procedure for Discretionary Denials, June 21, 2022

Scheduling Order, Volkswagen Group of America, Inc. v Arigna Technology Ltd., IPR2021-01321, February 15, 2022

United States District Courts - National Judicial Caseload Profile

Patent Owner's Preliminary Response to Petition for Inter Partes Review of U.S. Patent No. 8,247,867

EX2001 First Amended Complaint for Patent Infringement, Arigna Technology Limited v. Volkswagen AG et al, No. 2-21-cv-00054, Dkt. 28, filed March 9, 2021 (E.D. Tex)

EX2002 - ITC Proceeding Request No. 337-TA-1267, filed May 21, 2021 (U.S.I.T.C.)

EX2003 - Order Granting Motion to Stay, Arigna Technology Limited v. Volkswagen AG et al, No. 2-21-cv-00054, Dkt. 186, filed July 26, 2021 (E.D. Tex)

EX2004 - Order No. 14: Amended Procedural Schedule, ITC Proceeding No. 337-TA-1267, filed September 22, 2021 (U.S.I.T.C.)

EX2005 - The U.S. International Trade Commission, Section 337 Investigations, Answers to Frequently Asked Questions, March 2009, available at https://www.usitc.gov/intellectual_property/documents/337_faqs.pdf

EX2006 - Newest ITC Judge Arrives with Deep Experience in IP, Law360, September 13, 2021, available at https://www.law360.com/articles/1421239/print?section=ip

EX2007 - Respondents��� Joint Notice of Prior Art for U.S. Patent No. 8,289,082 and U.S. Patent No. 8,247,867, ITC Proceeding No. 337-TA-1267, filed October 29, 2021 (U.S.I.T.C.)

EX2008 - Baek et al., Accumulation mode field-effect transistors for improved sensitivity in nanowire-based biosensors, Appl. Phys. Lett. 100, 213701, May 25, 2012

EX2009 - Baliga et al., The Accumulation-Mode Field Effect Transistor: A New Ultralow On-Resistance MOSFET, IEEE Electron Device Letters, Vol. 13, No. 8, August 1992

EX2010 - Tian et al., Parallax Error in Video-Image Systems, Journal of Transportation Engineering, MAY/JUNE 2002

EX2011 - U.S. Patent No. 9,087,390

EX2012 - Public Version of Respondents' Opening Claim Construction Brief, ITC Proceeding No. 337-TA-1267, filed November 3, 2021 (U.S.I.T.C.)

EX2013 - Declaration of Dr. Kelin J. Kuhn in Support of Patent Owner's Response to Petition for Inter Partes Review of U.S. Patent No. 8,247,867

EX2014 - Dictionary.com definition of "penetrate," https://www.dictionary.com/browse/penetrate, May 17, 2022

EX2015 - CollinsDictionary.com definition of "penetrate," https://www.collinsdictionary.com/dictionary/english/penetrate, May 17, 2022

EX2016 - Shorter Oxford English Dictionary, Sixth Edition, 2007, definition of "penetrate"

EX2017 - The American Heritage Dictionary of the English Language, Fifth Edition, 2018, definition of "penetrate"

EX2018 - Deposition transcript of Dr. Banerjee, May 13, 2022

EX2019 - Exhibits from deposition of Dr. Banerjee, May 13, 2022 (part 1 of 2)

EX2019 - Exhibits from deposition of Dr. Banerjee, May 13, 2022 (part 2 of 2)

EX2020 - B. Jayant Baliga, IGBT: The GE Story, IEEE Power Electronics Magazine, June 2015

EX2021 - Scott E. Thompson et al., Moore's law: the future of Si microelectronics, Materials Today, June 2006, Volume 9, Number 6

EX2022 - Colinge et al., SOI Gated Resistor: CMOS without Junctions, IEEE 2009

EX2023 - Yannis Tsividis, Operation and Modeling of the MOS Transistor, Second Edition, 1999

EX2024 - Van Der Tol et al., Potential and Electron Distribution Model for the Buried-Channel MOSFET, IEEE Transactions on Electron Devices, Vol. 36, No. 4, April 1989

EX2025 - Curriculum Vitae of Dr. Kelin J. Kuhn

EX2026 - Kelin J. Kuhn: Listing of Case Work

EX2027 - Toshiba, IGBTs (Insulated Gate Bipolar Transistor) Application Note, 2018

EX2028 - Sang-Gi Kim et al., Behavior of trench surface by H2 annealing for reliable trench gate oxide, Journal of Crystal Growth 255 (2003) 123-129

EX2029 - IPR2021-01382 Declaration of Kelin Kuhn

EX2030 - Harry J. Levinson, Excerpt from Principles of Lithography, SPIE Press, 2001

EX2031 - Peter VanDerVoorn et al., CMOS Shallow-Trench-Isolation to 50-nm Channel Widths, IEEE Transactions on Electron Devices, Vol. 47, No. 6, June 2000

EX2032 - M. Morita et al., Growth of native oxide on a silicon surface, Journal of Applied Physics 68, 1272 (1990)

EX2033 - Public Version of Arigna's Opposition to Respondents' MIL No. 2 Regarding '867 Validity Opinion, ITC Proceeding No. 337-TA-1267, filed March 25, 2022 (U.S.I.T.C.) (part 1 of 3)

EX2033 - Public Version of Arigna's Opposition to Respondents' MIL No. 2 Regarding '867 Validity Opinion, ITC Proceeding No. 337-TA-1267, filed March 25, 2022 (U.S.I.T.C.) (part 2 of 3)

EX2033 - Public Version of Arigna's Opposition to Respondents' MIL No. 2 Regarding '867 Validity Opinion, ITC Proceeding No. 337-TA-1267, filed March 25, 2022 (U.S.I.T.C.) (part 3 of 3)

EX2034 - Declaration of Dr. Michael T. Postek, Ph.D., in support of Patent Owner's response to petition for inter partes review of U.S. Patent No. 8,247,867

EX2035 - Curriculum Vitae of Dr. Michael T. Postek

Patent Owner's Power of Attorney Under 37 C.F.R. 42.10

Mandatory Notices of the Patent Owner Pursuant to 37 C.R.F. 42.8(a)(2)

Notice Notice filing date accorded to petition

U.S. Patent No. 8,247,867 to Nakata et al

Declaration of Dr. Sanjay K. Banerjee, Ph.D Part 1 of 4

Declaration of Dr. Sanjay K. Banerjee, Ph.D Part 2 of 4

Declaration of Dr. Sanjay K. Banerjee, Ph.D Part 3 of 4

Declaration of Dr. Sanjay K. Banerjee, Ph.D Part 4 of 4

Excerpts from S.M. Sze, Physics of Semiconductor Devices

Excerpts from A.S. Sedra & K.C. Smith, Microelectronic Circuits

Excerpts from C. Kittel, Introduction to Solid State Physics

H. Wang, Power MOSFETs with Enhanced Electrical Characteristics

R.K. Williams, Beyond Y2K Technology Convergence as a Driver of Future Low-Voltage Power Management Semiconductors

G.E. Moore, Lithography and the Future of Moore's Law

R.J.E. Heuting et al., Switching Performance of Low-Voltage N-Channel Trench MOSFETs

S. Matsumoto et al., A High-Performance Self-Aligned UMOSFET With a Vertical Trench Contact Structure

A. Narazaki et al., A 0.35 um Trench Gate MOSFET With an Ultra Low On State Resistance and a High Destruction Immunity During the Inductive Switching

U.S. Patent No. 6,204,533 to Williams et al

M.A.A. in't Zandt et al

U.S. Patent No. 6,140,678 to Grabowski et al

S.C. Sun & J.D. Plummer, Modeling of the On-Resistance of LDMOS, VDMOS, and VMOS Power Transistors

R.S. Saxena & M.J. Kumar, Trench Gate Power MOSFET: Recent Advances and Innovations

R.K. Williams et al., The Trench Power MOSFET Part I History, Technology, and Prospects

D. Ueda et al., A New Vertical Power MOSFET Structure With Extremely Reduced On-Resistance

D. Kinzer, Ultra-Low Rdson 12 v P-Channel Trench MOSFET

R.K. Williams et al., Complementary Trench Power MOSFETs Define New Levels of Performance

U.S. Patent Application Pub. No. 2004/0041207 to Takano et al

U.S. Patent No. 7,999,345 to Nakazawa et al

U.S. Patent No. 7,687,352 to Su et al

C. Hu et al., Optimum Design of Power MOSFETs

U.S. Patent Application Pub. No. 2009/0218619 to Hebert et al

Japanese Patent Application Pub. No. 2006-59940 A to Hebinuma

Certified Translation of Japanese Patent Application Pub. No. 2006-59940 A to Hebinuma

U.S. Patent No. 8,247,865 to Hirler

International Patent Pub. No. WO 2009/060670 A1 to Torii et al.

Certified Translation of International Patent Pub. No. WO 2009/060670 A1 to Torii et al

U.S. Patent No. 7,332,770 to Kobayashi

U.S. Patent No. 6,888,196 to Kobayashi

U.S. Patent No. 6,413,822 to Williams et al

J. Kim et al., High-Density Trench MOSFETs Employing Two Step Trench Technique and Trench Contact Structure

U.S. Patent No. 7,701,001 to Jianjun et al

Japanese Patent Application Pub. No. 2001-127072 A to Inagawa et al

Certified Translation of Japanese Patent Application Pub. No. 2001-127072 A to Inagawa et al

U.S. Patent No. 7,880,225 to Matsuura et al

U.S. Patent No. 6,921,939 to Zeng

U.S. Patent No. 7,554,209 to Satou

U.S. Patent Application Pub. No. 2007/0093019 to Rieger et al

U.S. Patent No. 8,129,780 to Shinbori et al

U.S. Patent No. 7,504,303 to Yilmaz et al

U.S. Patent Application Pub. No. 2009/0179261 to Sekigu-chi et al

U.S. Patent No. 6,683,331 to Francis et al

U.S. Patent No. 7,504,306 to Sapp et al

U.S. Patent Application Pub. No. 2006/0267088 to Sharp et al

U.S. Patent No. 7,045,859 to Amali et al

A. Narazaki et al., A Marvelous Low On-Resistance 20V Rated Self Alignment Trench MOSFET

A. Gorgerino et al., Comparison of High Voltage Switches in Automotive DC-DC Converter

D. Kinzer, Advances in Power Switch Technology for 40V - 300V Applications

U.S. Patent No. 6,188,105 to Kocon et al

A. Lidow et al., The Semiconductor Roadmap for Power Management in the New Millenium

H. Wang et al., Observation and Utilization of Boron Segregation in Trench MOSFETs to Improve Figure of Merit (FOM)

U.S. Patent No. 5,627,102 to Shinriki et al

U.S. Patent No. 7,687,902 to Shiraishi et al

Excerpt from Prosecution File History for U.S. Patent No. 8,247,867

Prosecution File History for Chinese Patent Application No. 102044565

Certified Translation of Excerpts from Prosecution File History for Chinese Patent Application No. 102044565

Prosecution File History for German Patent Application No. 102010042691

Certified Translation of Excerpts from Prosecution File History for German Patent Application No. 102010042691

Prosecution File History for Japanese Patent Application No. 2009241266

Certified Translation of Excerpts from Prosecution File History for Japanese Patent Application No. 2009241266

Declaration of Kelley M. Hayes Greenhill

P. Goarin et al., Power Trench MOSFETs With Very Low Specific On-Resistance for 25V Applications

Documents citing J. Kim et al., High-Density Trench MOSFETs Employing Two Step Trench Technique and Trench Contact Structure

J. Kim et al., A Novel Process Technique for Fabricating High Reliable Trench DMOSFETs Using Self-Align Technique and Hydrogen Annealing

U.S. Patent No. 9,224,582 to Forster et al

(Public) Exhibit 77 to Complaint, Certain Power Inverters and Converters, Vehicles Containing Same, and Compo-nents Thereof, Inv. No. 337-TA-1267 (I.T.C.)

Petitioner's Power of Attorney

Declaration of David Liu

Petition for Inter Partes Review

Motion for Joinder