The detailed information for PTAB case with proceeding number IPR2022-01288 filed by NVIDIA Corporation against Ocean Semiconductor LLC on Aug 9, 2022. This includes filing dates, application numbers, tech centers, patent numbers, and current case status.

Case Details

Proceeding Number
IPR2022-01288
Filing Date
Aug 9, 2022
Petitioner
NVIDIA Corporation
Respondent
Ocean Semiconductor LLC
Status
Terminated-Settled
Respondent Application Number
11684211
Respondent Tech Center
2800
Respondent Patent Number
7629211
Termination Date
Oct 26, 2022

Proceeding Documents

The table below shows documents filed in the case, listing each document name, filing date, document type, and filing party. Tracking these filings indicates the activity of the parties involved in the case, and the types of documents filed can provide insights into the legal strategies being employed.


Document NameFiling DateCategoryFiling Party

Alert me when new update on this case

Notice: refund approved

Nov 3, 2022PAPERBOARD

Petitioner NVIDIA Corporation’s Request for Refund of Post-Institution Fees

Oct 27, 2022PAPERPETITIONER

Termination Decision: DECISION Settlement Prior to Institution of Trial 37 C.F.R. § 42.74

Oct 26, 2022PAPERBOARD

Joint Motion to Terminate

Oct 11, 2022PAPERPETITIONER

Joint Request to Keep Written Release Agreement Separate

Oct 11, 2022PAPERPETITIONER

Petitioner's Updated Exhibit List

Oct 11, 2022PAPERPETITIONER

Executed Release Agreement

Oct 11, 2022EXHIBITPETITIONER

Power of Attorney by Patent Owner Ocean Semiconductor LLC

Sep 30, 2022PAPERPATENT OWNER

Patent Owner's Mandatory Notice

Sep 30, 2022PAPERPATENT OWNER

Notice: Notice filing date accorded

Aug 23, 2022PAPERBOARD

U.S. Patent No. 7,629,211

Aug 9, 2022EXHIBITPETITIONER

Prosecution File History for '211 Patent

Aug 9, 2022EXHIBITPETITIONER

U.S. Patent Application Publication No. 20060166492

Aug 9, 2022EXHIBITPETITIONER

U.S. Patent Application Publication No. 2006-0134873

Aug 9, 2022EXHIBITPETITIONER

Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon source-drain stressors

Aug 9, 2022EXHIBITPETITIONER

U.S. Patent Application Publication No. 2005-0285192

Aug 9, 2022EXHIBITPETITIONER

Totally relaxed GexSi1-x layers with low threading dislocation densities grown on Si substrates, Applied Physics Letters

Aug 9, 2022EXHIBITPETITIONER

Nanopantography: A New Method for Massively Parallel Nanopatterning over Large Areas

Aug 9, 2022EXHIBITPETITIONER

Log-based State Machine Construction for Analyzing Internal Logistics of Semiconductor Equipment

Aug 9, 2022EXHIBITPETITIONER

Wet chemical etching of silicate glasses in hydrofluoric acid based solutions

Aug 9, 2022EXHIBITPETITIONER

Materials for Strained Silicon Devices

Aug 9, 2022EXHIBITPETITIONER

X-ray diffraction as a tool to study the mechanical behaviour of thin films

Aug 9, 2022EXHIBITPETITIONER

Declaration of E. Fred Schubert

Aug 9, 2022EXHIBITPETITIONER

Power of Attorney

Aug 9, 2022PAPERPETITIONER

Petition for Inter Partes Review of US Patent No 7,629,211

Aug 9, 2022PAPERPETITIONER