Innoscience (Zhuhai) Technology Company, Ltd. et al. vs Efficient Power Conversion Corporation

Petitioner's Notice of Appeal

Final Written Decision: original

Other: Hearing transcript

Patent Owner's Responsive Claim Construction Brief

Petitioner's Responsive Brief to Patent Owner's Opening Brief Regarding Construction of Claim Element [1e4]

Petitioner's Brief in Response to the Board's Order Regarding Construction of Claim Element [1e4]

Patent Owner's Opening Supplemental Claim Construction Brief

Order: Conduct of the Proceeding 37 C.F.R. sec. 42.5

Petitioner's Updated Exhibit List

Petitioner's Demonstratives

Patent Owner's Demonstratives

LEAP Practitioner Request and Verification Form (Patent Owner)

Petitioner's Reply in Support of Motion to Exclude Patent Owner's Unauthorized Evidence

Joint Stipulation for Alternative Schedule for Serving and Filing Demonstratives

Petitioner's Updated Exhibit List

Public Version of Commission Opinion, Certain Semiconductor Devices, And Methods Of Manufacturing Same And Products Containing The Same, Inv. No. 337-TA-1366

Patent Owner's Opposition to Motion to Exclude

Petitioner's Motion to Exclude Patent Owner's Unauthorized Evidence

Petitioner's Updated Exhibit List

Email from Trials, November 1, 2024

ORDER Setting Oral Argument 37 C.F.R. § 42.70

Patent Owner's Request for Oral Argument

Petitioner's Request for Oral Hearing

Petitioner's Objections to Evidence Submitted with Patent Owner's Sur-Reply

PATENT OWNER’S SUR-REPLY

Ex. 2008_Evidentiary Hring Tr. (Pubpgs 239-506)(Inv. No. 337-TA-1366)240227 337-TA-1366 (open)(revised)

Petitioner's Reply

Petitioner's Updated Exhibit List

Exhibit prepared by Dr. Shealy at Deposition

Second Declaration of Dr. James Richard Shealy

Kim et al., “Effects of SiN Passivation and High-Electric Field on AlGaN–GaN HFET Degradation,”

Green et al., “The Effect of Surface Passivation on the Microwave Characteristics of Undoped AlGaN/GaN HEMT’s,”

Kaper et al., “High-Power Monolithic AlGaN/GaN HEMT Oscillator,

Wang et al., “Performance Enhancement by Using the n+-GaN Cap Layer and Gate Recess Technology on the AlGaN–GaN HEMT Fabrication,”

U.S. Patent Application Publication No. 2008/0296618 to Suh

Thompson et al., “Improved Fabrication Process for Obtaining High Power Density AlGaN/GaN HEMTs,”

Gorowitz et al., “Methods of Metal Patterning and Etching,”

Collins et al., “Process Control of the Chlorobenzene Single-Step Liftoff Process with a Diazo-Type Resist,”

Liang et al., “Improved Bi-Layer Lift-off Process for MEMS Applications,”

Walker et al., “Handbook of Metal Etchants,” Part 1 of 3

Walker et al., “Handbook of Metal Etchants,” Part 2 of 3

Walker et al., “Handbook of Metal Etchants,” Part 3 of 3

Harvard et al., “Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation,”

ITC Investigation No. 337-TA-1366 hearing transcript, March 1, 2024

PATENT OWNER’S RESPONSE

Exhibit 2001 - Schubert Declaration

Exhibit 2002 - Shealy Deposition Transcript

Exhibit 2003 - Shealy Exhibit 1040

Exhibit 2004 - US6478871

Exhibit 2005 - US9991360

Exhibit 2006 - US20080087915A1

Exhibit 2007 - USD715107

Petitioner's Updated Mandatory Notices

Patent Owner's Notice of Deposition of J. Shealy

Petitioner's Updated Power of Attorney

Patent Owner's Updated Mandatory Notice

Scheduling Order

Granting Institution of Inter Partes Review 35 U.S.C. § 314

Patent Owner's Sur-Reply to Petitioner's Reply to Patent Owner's Preliminary Response

Petitioner's Reply to Patent Owner's Preliminary Response

Petitioner's Updated Exhibit List

Email exchange between Petitioner and Board

Complainant’s Opening Claim Construction Brief

Patent Owner's Preliminary Response

Patent Owner's Mandatory Notice

Patent Owner's Power of Attorney

Notice: Notice filing date accorded

Petition for Inter Partes Review of U.S. Patent No. 8,404,508

Power of Attorney - Innoscience (Zhuhai) Technology Company, Ltd.

Power of Attorney - Innoscience America, Inc.

U.S. Patent No. 8,404,508

Prosecution History of the '508 patent

Declaration of Dr. James Richard Shealy, Ph.D.

Japanese Patent Application Publication No. JPH11261053A to Yoshida

International Publication No. WO 2005/057624 to Beach

U.S. Patent No. 7,238,560 to Sheppard

U.S. Patent Application Publication No. 2006/0273347 to Hikita

U.S. Patent Application Publication No. 2008/0079023 to Hikita

U.S. Patent Application Publication No. 2007/0007547 to Beach

Hu, Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

Ghandhi, VLSI Fabrication Principles

Suh, p-GaN/AlGaN/GaN Enhancement-Mode HEMTs

Japanese Patent Application Publication No. JP 2007-066979A to Iwatani

Jang, High-quality GaN/Si(111) epitaxial layers

Feltin, Crack-Free Thick GaN Layers

U.S. Patent No. 5,223,724 to Green

U.S. Patent No. 6,211,000 to Spikes

U.S. Patent No. 5,225,360 to Shim

U.S. Patent Application Publication No. 2005/0133818 to Johnson

U.S. Patent Application Publication No. 2007/0228416 to Chen

Shimizu, p-Type InGaN Cap Layer for Normally Off Operation

U.S. Patent Application Publication No. 2009/0042344 to Ye

U.S. Patent No. 6,316,793 to Sheppard

U.S. Patent Application Publication No. 2008/0073652 to Sugimoto

Zhu, Effects of Rapid Thermal Annealing

Campbell, The Science and Engineering of Microelectronic Fabrication

Woll, GaN Nucleation and Growth on Sapphire (0001)

Smart, AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

Liu, Demonstration of undoped quaternary AlInGaN/GaN heterostructure

Ambacher, Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well

Taiwanese Patent Application Publication No. TW200414540 A to Sheu

Japanese Patent Application Publication No. JP 2007109830A to Mizutani

U.S. Patent No. 6,897,514 to Kouznetsov

U.S. Patent Application Publication No. 2006/0006500 to Piner

Kumar, Field-Plated 0.25-um Gate-Length AlGaN/GaN HEMTs

Saito, Design and Demonstration of High Breakdown Voltage GaN HEMT

U.S. Patent Application Publication No. 2006/0060895 to Hikita