GLOBALFOUNDRIES Inc. et al. vs OAK IP LLC

Notice: Referral to Board Panel

Notice: Notice filing date accorded

Notice: PO Mandatory Notice

Ex. 1001 U.S. Patent No. 10,090,395

Ex. 1002 File History of U.S. Patent No. 7,084,423

Ex. 1003 U.S. Patent No. 7,084,423

Ex. 1004 File History of U.S. Patent No. 6,833,556

Ex. 1005 U.S. Patent No. 6,833,556

Ex. 1006 File History of U.S. Patent No. 7,462,860

Ex. 1007 U.S. Patent No. 7,462,860

Ex. 1008 File History of U.S. Patent No. 7,884,003

Ex. 1009 U.S. Patent No. 7,884,003

Ex. 1010 File History of U.S. Patent No. 8,431,469

Ex. 1011 U.S. Patent No. 8,431,469

Ex. 1012 File History of U.S. Patent No. 9,425,277

Ex. 1013 U.S. Patent No. 9,425,277

Ex. 1014 File History of U.S. Patent No. 9,905,691

Ex. 1015 U.S. Patent No. 9,905,691

Ex. 1016 File History of U.S. Patent No. 9,812,542

Ex. 1017 U.S. Patent No. 9,812,542

Ex. 1018 File History of U.S. Patent No. 10,388,748

Ex. 1019 U.S. Patent No. 10,388,748

Ex. 1020 File History of U.S. Patent No. 10,090,395

Ex. 1021 U.S. Patent No. 7,176,483 (Grupp)

Ex. 1023 Rhoderick, Metal-semiconductor contacts

Ex. 1024 Chang et al., Specific contact resistance

Ex. 1025 Goodnick et al., Effects of a thin SiO2 layer

Ex. 1026 Sobolewski & Helms, Studies of barrier height

Ex. 1027 U.S. Patent No. 4,110,488 (Risko)

Ex. 1028 Taubenblatt et al., Interface effects in titanium and hafnium (19

Ex. 1029 U.S. Patent No. 3,983,264 (Schroen)

Ex. 1030 U.S. Patent No. 4,845,050 (Kim)

Ex. 1031 JPH11162874A

Ex. 1032 Certified Translation JPH11162874A (Iwaguro)

Ex. 1033 Brassard et al., Tuning the electrical resistivity (2004)

Ex. 1034 Redline of Specification 483 Patent & 423 Patent

Ex. 1035 Brassard & Khakani, Pulsed-laser deposition of high (2005)

Ex. 1036 Brassard et al., Substrate biasing effect on the electrical (2007)

Ex. 1037 U.S. Pub. No. 2014-0117465 (Huang)

Ex. 1038 Complaint, E.D.Tex. 19cv00347

Ex. 1042 Ex. F to Acorn’s Preliminary Infringement Contentions (395 patent)

Ex. 1043 Redaction to 394 Response to JMOL on Noninfringement

Ex. 1044 Ex. B-1 Piner Trial Demonstratives, Redacted

Ex. 1045 Jury Verdict form, 19cv347

Ex. 1046 Mott & Friedman, Metal-insulator transitions

Ex. 1047 Asbrink & Magnéli, Crystal structure studies on trititanium (1959)

Ex. 1048 Dr. Kuhn’s Deposition Transcript from July 6, 2021 with errata

Ex. 1049 Dr. Kuhn’s Deposition Transcript from July 7, 2021 with errata

Ex. 1050 Kostenko et al., Simulation of the short-range order

Ex. 1051 Valeeva & Kostenko, Stable Ti9O10 nanophase grown

Ex. 1052 Gerlich et al., Thermoelastic properties of ULE

Ex. 1053 Robb, “Plasma etching of oxygen containing (1984)

Ex. 1054 Stella et al., Charge Transport Through Thin

Ex. 1055 Lee et al., Tunnel barrier engineering of titanium

Ex. 1056 Murray et al., The O-Ti (Oxygen-Titanium) system

Ex. 1057 Al-Ani et al., The optical absorption edge of amorphous

Ex. 1058 Tian et al., Effect of Microstructure of TiO2 Thing Films

Ex. 1059 Wang et al., High-Performance Photothermal Conversion

Ex. 1060 Roy & Krupanidhi, Pulsed excimer laser ablated barium

Ex. 1061 Hao et al., Dielectric properties of pulsed-laser-deposited

Ex. 1062 Shveikin, Magnetic Properties of Ti3O6 with Chromium

Ex. 1063 Denker, Electronic Properties of Titanium Monoxide

Ex. 1064 van de Krol et al., Electrical and optical properties

Ex. 1065 Imai et al., Interfacial reaction of MgO-TiOx superlattice

Ex. 1066 CC Vacuum Coating Materials Co, Ltd. (July 21, 2021)

Ex. 1067 Pontes et al., High dielectric constant of SrTiO3

Ex. 1068 Doeff et al., Titanate anodes for sodium ion batteries

Ex. 1069 Mo & Ching, Electronic and optical properties of three

Ex. 1070 Nguyen et al., Optical Properties of Jet‐Vapor‐Deposited

Ex. 1071 Rangel-Kuoppa & Conde-Gallardo, Ohmic contact recipe

Ex. 1072 Glebov et al., Planar optical waveguides on glasses

Ex. 1073 Shikama et al., Erosion behaviour of physically vapour-deposited

Ex. 1074 Szydlo & Poirier, I-V and C-V Characteristics of AuTi02

Ex. 1075 CPHMI Phelly Materials, Phelly Ti3O5

Ex. 1076 Hong, Crystal Growth of Some Intermediate (1982)

Ex. 1077 Gwo et al., Local electric-field-induced oxidation

Ex. 1078 Takeuchi et al., Dielectric properties of sputtered

Ex. 1079 Fitzgibbons et al., TiO2 Film Properties as a Function

Ex. 1080 Bertaud et al., Ultra wide band frequency characterization

Ex. 1081 Liu et al., Structural, electronic, mechanical

Ex. 1082 Hallock et al., Method to Fabricate Low Stress

Ex. 1083 US4912286 (Clarke)

Ex. 1084 Yang et al., A novel carbon thermal reduction

Ex. 1085 Kashiwaya et al., The Work Function of TiO2 (2018)

Ex. 1086 Bartkowski et al., Electronic structure of titanium (1997)

Ex. 1087 Marques & Jasieniak, Ionization potential and electron

Ex. 1088 Chen, et al., Ground state structure (2020)

Ex. 1089 Petition, IPR2020-01207

Ex. 1090 Institution Decision, IPR2020-01207

Ex. 1091 Final Written Decision, IPR2020-01207

Ex. 1092 Trial Transcript, Redacted, Acorn v. Samsung Vol 2

Ex. 1093 Final Judgment, 2021.07.13 ECF 379

Ex. 1095 Complaint, 25-cv-00142

Ex. 1096 Petition, IPR2020-01282

Ex. 1097 Final Written Decision, IPR2020-01282

Ex. 1098 Institution Decision, IPR2020-01282

Ex. 1099 U.S. Patent No. 5,216,282 (Cote)

Ex. 1100 Markman Order, E.D. Tex. 19-cv-00347

Ex. 1101 U.S. Patent No. 6,724,088 (Jammy)

Ex. 1102 Brassard et al., Compositional effect on the dielectric (2006)

Ex. 1103 Stesmans et al., Si dangling-bond-type defects

Ex. 1104 EDTX-2-19-cv-00347-416

Ex. 1105 Certificate of Cancellation for 395 patent

Ex. 1106 Acorn Semi Statutory Disclaimer

Ex. 1107 S. M. Sze Semiconductor Devices

Ex. 1108 Lucovsky et al, Bonding Constraint-Induced Defect (1999)

Ex. 1109 GlobalFoundries waived service (3-4-2025)

Ex. 1110 Groner et al, Electrical Characterization of Thin (2002)

Ex. 1111 Tsai et al, Surface Preparation and Interfacial Stability (2002)

Ex. 1112 Raider et al, Oxide Growth on Etched Silicon (1975)

Ex. 1113 Cerofolini et al, Mechanisms and Kinetics (1997)

Ex. 1114 Mende et al, Oxidation of Etched Silicon (1983)

Ex. 1094 Luo, High-k Gate Dielectrics for Si CMOS

Ex. 1115 Toshiba, Basics of Schottky Barrier, Ch.1 (2022)

Ex. 1116 Final Written Decision, IPR2020-01183 (2-9-2022)

Ex. 1117 TiO Melting Point

Ex. 1118 TiO2 Melting Point

Ex. 1119 Ti2O3 Melting Point

Ex. 1022 Declaration of E. Fred Schubert

Petition: as filed

Petitioner's Power of Attorney