Taiwan Semiconductor Manufacturing Company Limited v. Marlin Semiconductor Ltd. et al. - IPR2025-01082

Nasdaq – This 1 Number May Ensure TSMC’s Market Dominance

CNBC Transcript – US Commerce Secretary Howard Lutnick

Removing Barriers to American Leadership in Artificial Intelligence

’384 Patent Assignment to Marlin

TSMC Technology Overview

Another Historic Investment Secured Under President Trump

Decoding TSMC’s Contribution to the AI and 5G Ecosystem

TSMC-Ansys Collaboration Press Release

TSMC-Cadence Press Release

TSMC’s Resurgence: What Lies Ahead for the Architect of AI

Alex He, In the Global AI Chips Race, China Is Playing Catch-Up (September 18, 2024)

NVIDIA and Oracle to Build US Department of Energy’s Largest AI Supercomputer for Scientific Discovery (October 28, 2025); available at https://nvidianews.nvidia.com/news/nvidia-oracle-us-department-of-energy-ai-supercomputer-scientific-discovery

NVIDIA Blackwell Architecture; The engine behind AI factories for the age of AI reasoning—now in full production.; available at https://www.nvidia.com/en-us/data-center/technologies/blackwell-architecture/

Decoding TSMC’s Contribution to the AI and 5G Ecosystem

Yahoo! Finance Article on TSMC Fab 21

Declaration of Mr. Robert W. Bahr

U.S. Pat. App. Publication No. 2004/0145019 (“Dakshina’019”)

U.S. Pat. App. Publication No. 2004/0256647 (“Lee’647”)

Kevin Zhai, The changing landscape of semiconductor manufacturing: why the health sector should care (June 11, 2023)

Petitioner’s Opposition To Patent Owner’s Discretionary Denial Request

Email Correspondence

Patent Owner's Request for Discretionary Denial of Institution

EX2101

EX2102

EX2103

EX2104

Notice: Mandatory Notice

Notice: Power of Attorney

Notice: Notice filing date accorded

U.S. Patent No. 6,888,181 (the ’181 Patent)

Prosecution File History, U.S. Patent No. 6,888,181 (Prosecution History)

U.S. Patent No. 7,045,401 (Lee)

U.S. Patent No. 6,774,390 (Sugiyama)

U.S. Patent No. 6,803,631 (Dakshina-Murthy)

U.S. Pat. App. Publication No. 2004/0036126 (Chau)

U.S. Pat. App. Publication No. 2004/0061178 (Lin)

U.S. Patent No. 6,413,802 to Hu et al. (Hu)

B. Doyle - Tri-Gate Fully-Depleted CMOS Transistors: Fabrication, Design

Doyle - High Performance Fully-Depleted Tri-Gate CMOS Transistors

S. Wolf et al., Silicon Processing for the VLSI Era Volume 1

U.S. Patent No. 5,461,250 to Burghartz et al. (Burghartz)

U.S. Patent No. 6,339,232 to Shinichi Takagi (Takagi)

U.S. Patent Application No. 10/227,068, as filed August 23, 2002

IEEE Electron mobilities and highfield drift velocities in strained silicon

Liu; Flexible Threshold Voltage FinFETs with Independent Double Gates

Feng et al., BSIMSOI v.2.0 MOSFET Model – User’s Manual for BSIMDD2.0

Declaration of Dr. Paul Braun

U.S. Pat. App. Publication No. 2005/0017377 (Joshi)

Petition for Inter Parties Review

Petitioner's Power of Attorney