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Taiwan Semiconductor Manufacturing Company, Ltd. - IPR2025-01211

The detailed information for PTAB case with proceeding number IPR2025-01211 filed by Taiwan Semiconductor Manufacturing Company, Ltd. on Jul 25, 2025. This includes filing dates, application numbers, tech centers, patent numbers, and current case status.

Case Details

Proceeding Number
IPR2025-01211
Filing Date
Jul 25, 2025
Petitioner
Taiwan Semiconductor Manufacturing Company, Ltd.
Status
Petition filed
Respondent Application Number
11000904
Respondent Tech Center
2800
Respondent Patent Number
7439623

Proceeding Documents

The table below shows documents filed in the case, listing each document name, filing date, document type, and filing party. Tracking these filings indicates the activity of the parties involved in the case, and the types of documents filed can provide insights into the legal strategies being employed.


Document NameFiling DateCategoryFiling Party

Alert me when new update on this case

U.S. Patent No. 7,439,623

Jul 25, 2025EXHIBITPETITIONER

File History of U.S. Patent No. 7,439,623

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 5,250,465 to Iizuka et al.

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent Publication No. 2004/0173905 to Kamoshima et al.

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 7,042,099 to Kurashima

Jul 25, 2025EXHIBITPETITIONER

Kaanta et al., “Dual Damascene: A ULSI Wiring Technology,"

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 5,032,890 to Ushiku

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 6,156,660 to Liu et al.

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 5,798,298 to Yang

Jul 25, 2025EXHIBITPETITIONER

Bao et al., “90 nm generation Cu/CVD low-k"

Jul 25, 2025EXHIBITPETITIONER

Loke, “Process Integration Issues of Low-Permittivity Dielectrics"

Jul 25, 2025EXHIBITPETITIONER

Huang, et al., “Numerical modeling and characterization of the stress"

Jul 25, 2025EXHIBITPETITIONER

IEEE Proceedings - Ogawa, et al., “Stress-Induced Voiding Under Vias"

Jul 25, 2025EXHIBITPETITIONER

Advanced Metallization - Geometrical Aspects of Stress-Induced Voiding

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 6,215,189 to Toyoda et al.

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 6,238,850 to Bula et al.

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent Publication No. 2003/0116852 to Watanabe et al.

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent Publication No. 2004/0113238 to Hasunuma et al.

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 6,468,894 to Yang

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 6,022,808 to Nogami

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 5,885,857 to Yamaha et al.

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent Publication No. 2003/0005399 to Igarashi

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 6,717,268 to Hau-Riege

Jul 25, 2025EXHIBITPETITIONER

Tu, “Recent advances on electromigration in very-large-scale-integration"

Jul 25, 2025EXHIBITPETITIONER

Interface - Cooper, "Copper On-Chip Interconnections"

Jul 25, 2025EXHIBITPETITIONER

JP2000012688 to Nasu and Certified Translation

Jul 25, 2025EXHIBITPETITIONER

Wolf, Silicon Processing for the VLSI Era

Jul 25, 2025EXHIBITPETITIONER

EX1018 AICP's P.R. 3-1 Disclosure and P.R. 3-2 in 25-cv-00324-JRG

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent No. 6,717,267 to Kunikiyo (Kunikiyo)

Jul 25, 2025EXHIBITPETITIONER

JP2002299437 (“Fukazawa”) and Certified Translation of Fukazawa

Jul 25, 2025EXHIBITPETITIONER

U.S. Patent Publication No. 2001/0030365 to Otsuka et al. (Otsuka)

Jul 25, 2025EXHIBITPETITIONER

JPH10214893 to Fujii (“Fujii”) and Certified Translation of Fujii

Jul 25, 2025EXHIBITPETITIONER

Declaration of Dr. Reinhold Dauskardt

Jul 25, 2025EXHIBITPETITIONER

Taiwan Semiconductor Manufacturing Company Ltd. Power of Attorney

Jul 25, 2025PAPERPETITIONER

Petition for Inter Partes Review

Jul 25, 2025PAPERPETITIONER

Notice Ranking Petitions

Jul 25, 2025PAPERPETITIONER