Excelliance Mos Corporation vs Force MOS Technology Co., Ltd. - IPR2025-01433

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U.S. Patent No. 7,629,634 (the “’634 Patent” or “’634”)

File History of the ’634 Patent

Expert Declaration of Dr. Daniel Foty

Expert Curriculum Vitae of Dr. Daniel Foty

U.S. Patent Publication No. 2006/0273384 A1 (“Hshieh” or “’384”)

U.S. Patent No. 6,984,864 (“Uno” or “’864”)

B. Davari et al., A Variable-Size Shallow Trench Isolation (STI) Technology

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U.S. Patent No. 5,395,786

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Ashwin H. Shah et al., A 4-Mbit DRAM with Trench-Transistor Cell, IEEE Jour

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A. S. Grove, Physics and Technology of Semiconductor Devices, 330 (1967)

Force Mos Technology, Co. Ltd. v. AsusTek Computer, Inc. ECF No. 416 Transc

Genshu Fuse et al., Indirect Trench Sidewall Doping by Implantation of Refl

S. E. Berberich et al., Trench Sidewall Doping for Lateral Power Devices, C

Michael Quirk and Julian Serda, Semiconductor Manufacturing Technology, 475

A. Agrawal et al., Self-Sealed Circular Channels for Micro-Fluidics, Sensor

D. Edelstein et al., Full Copper Wiring in a Sub-0.25 um CMOS ULSI Technolo

S. Nizou et al., Deep Trench Doping by Plasma Immersion Ion Implantation in

Force Mos Technology, Co. Ltd. v. AsusTek Computer, Inc. ECF No. 132 Order